2SD2474.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD2474 데이타시트 다운로드

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Transistor
2SB1612
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2474
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–10
V
Collector to emitter voltage VCEO
–10
V
Emitter to base voltage
VEBO
–7
V
Peak collector current
ICP
–2.4 A
Collector current
IC
–2 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Unit: mm
4.5±0.1
1.6±0.2
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ SC–62
Mini Power Type Package
Marking symbol : 2F
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = –7V, IE = 0
IC = –10µA, IE = 0
–1 µA
–10 V
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = –1mA, IB = 0
IE = –10µA, IC = 0
–10
–7
V
V
Forward current transfer ratio
hFE
VCE = –2V, IC = 200mA
200 800
Collector to emitter saturation voltage VCE(sat)
IC = –1A, IB = –10mA
– 0.19 – 0.25 V
Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz 60 MHz
Collector output capacitance
Cob
VCB = –6V, IE = 0, f = 1MHz
100 pF
1

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Transistor
PC — Ta
1.4
Printed circut board: Copper
foil area of 1cm2 or more, and
1.2 the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=100
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
240
IE=0
f=1MHz
Ta=25˚C
200
160
120
80
40
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–1.2
Ta=25˚C
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
IB=–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –2.4
Collector to emitter voltage VCE (V)
2SB1612
IC — VBE
–3.0
VCE=–2V
–2.5 25˚C
Ta=75˚C
–25˚C
–2.0
–1.5
–1.0
– 0.5
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–2V
500
400
Ta=75˚C
300 25˚C
–25˚C
200
100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
240
VCB=–6V
f=200MHz
Ta=25˚C
200
160
120
80
40
0
1
3
10 30
100
Emitter current IE (mA)
2