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2SD2589Darlington
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659)
Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions FM-25(TO220)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2589
110
110
5
6
1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=110V
VEB=5V
IC=30mA
VCE=4V, IC=5A
IC=5A, IB=5mA
IC=5A, IB=5mA
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SD2589
100max
100max
110min
5000min
2.5max
3.0max
60typ
55typ
Unit
µA
µA
V
V
V
MHz
pF
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton tstg tf
(V)
()
(A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
30 6
5 10 –5 5 –5 0.8typ 6.2typ 1.1typ
10.2±0.2
4.8±0.2
2.0±0.1
a ø3.75±0.2
b
1.35
0.65
+0.2
-0.1
2.5 2.5
BCE
1.4
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
6
0.5mA
0.4mA
0.3mA
4
0.2mA
2
IB=0.1mA
0
02 4 6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
6
2
IC=5A
1
IC=3A
0
0.1
0.5 1
5 10
Base Current IB(mA)
50 100
4
2
0
0 1 2 2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
40000
Typ
10000
5000
1000
500
200
0.02
0.1 0.5 1
Collector Current IC(A)
56
h FE– I C Temperature Characteristics (Typical)
(VCE=4V)
40000
10000 125˚C
5000
25˚C
–30˚C
1000
500
100
0.02
0.1 0.5 1
Collector Current IC(A)
56
θ j-a– t Characteristics
5
1
0.5
0.4
1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
80
Typ
60
40
20
0
–0.02
–0.1
–1
Emitter Current IE(A)
–6
Safe Operating Area (Single Pulse)
Pc–Ta Derating
50
40
30
20
10
2 Without Heatsink
0
0 25 50
75 100 125 150
Ambient Temperature Ta(˚C)
161