2SD2598.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD2598 데이타시트 다운로드

No Preview Available !

Transistor
2SD2598
Silicon NPN epitaxial planer type
darlington
For low-frequency amplification
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
s Features
q Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 20000.
q A shunt resistor is omitted from the driver.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage VCEO
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
750 mA
Collector current IC 500 mA
Collector power dissipation PC*1
1
W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
Internal Connection
B
(HW type)
C
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
ICBO
IEBO
VCBO
VCEO
VEBO
hFE*1
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 500mA*2
IC = 500mA, IB = 0.5mA*2
IC = 500mA, IB = 0.5mA*2
VCB = 10V, IE = –50mA, f = 200MHz
*1hFE Rank classification
Rank
Q
R
hFE 4000 ~ 10000 8000 ~ 20000
min
60
50
5
4000
E
typ max Unit
100 nA
100 nA
V
V
V
20000
2.5 V
3.0 V
200 MHz
*2 Pulse measurement
1

No Preview Available !

Transistor
PC — Ta
2.0
Printed circut board: Copper
foil area of 1cm2 or more, and
1.6
the board thickness of 1.7mm
for the collector portion.
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=1000
30
10
25˚C
3
Ta=–25˚C
1 75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
IC — VCE
900
750 IB=150µA 125µA 100µA
Ta=25˚C
75µA
600 50µA
450
300
150
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
105
VCE=10V
Ta=75˚C
104 25˚C
–25˚C
103
102
10
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
2SD2598
VCE(sat) — IC
100
IC/IB=1000
30
10
3 25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (mA)
Cob — VCB
9.0
f=1MHz
IE=0
Ta=25˚C
7.5
6.0
4.5
3..0
1.5
0
1
3
10 30
100
Collector to base voltage VCB (V)
2