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DT2955
P-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
D
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
C D D 3.30 3.71
E 2.22 2.35
GD S
EG
P
G 0.92 1.00
H 1.10 1.30
JH
KL
M
N
R J 1.55 1.80
K 0.025 0.102
S L 0.66 0.79
M 4.55 4.70
N — 10°
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Value
-60
±20
-2.5
-15
3.0
1.3
1.1
-65 to +150
Unit
V
V
A
W
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
RQJA
RQJC
Value
42
12
Unit
°C/W
°C/W
Notes:
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11610 Rev. C-4
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DT2955

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Electrical Characteristics25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
Zero Gate Voltage Drain Current
Tj = 125°C
IDSS
Gate-Body Leakage, Forward
IGSSF
Gate-Body Leakage, Reverse
IGSSR
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Tj = 125°C
VGS(th)
-2.0
-0.8
-2.4
-2.0
Static Drain-Source On-Resistance
Tj = 125°C
RDS (ON)
0.21
0.3
0.36
On-State Drain Current
ID(ON)
-12
Forward Transconductance
gFS — 3.5
DYNAMIC CHACTERISTICS
Input Capacitance
Ciss — 570
Output Capacitance
Coss — 140
Reverse Transfer Capacitance
Crss
40
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
tD(ON)
8.0
Turn-On Rise Time
tr — 20
Turn-Off Delay Time
tD(OFF)
20
Turn-Off Fall Time
tf — 5.0
Total Gate Charge
Qg — 16
Gate-Source Charge
Qgs — 2.0
Gate-Drain Charge
Qgd — 4.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
IS
Drain-Source Diode Forward Voltage
VSD
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
-10
-100
100
-100
-4.0
-2.6
0.30
0.45
0.50
15
40
40
20
25
5.0
8.0
-2.3
-1.3
Unit
V
µA
nA
nA
Test Conditions
VGS = 0V, ID = -250µA
VDS = -60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -10V, ID = -2.5A
W VGS = -10V, ID = -2.5A
VGS = -4.5V, ID = -2.0A
A VGS = -10V, VDS = -5.0V
m VDS = -10V, ID = -2.5A
pF
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
pF
ns
ns VDD = -30V, ID = -1.0A
ns VGEN = -10V, RGEN = 6.0W
ns
nC
nC
VDS = -30V. ID = -2.5A.
VGS = -10V
nC
A
V VGS = 0V, IS = -2.5A (Note 2)
DS11610 Rev. C-4
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-12
VGS = -10V -8.0
-7.0
-6.0
-9
-5.5
-6 -5.0
-4.5
-3
-4.0
3.0
VGS = -4.0V
-4.5
2.5
2.0
-5.0
-5.5
-6.0
1.5
-7.0
-8.0
1.0 -10
0
0
-3.5
-1 -2 -3 -4 -5
VDFSig,.D1R, AOINn--RSOegUioRnCCEhVaOraLcTteArGisEtic(sV)
-6
0.5
0 -3 -6 -9 -12 -15
Fig. 2, On-ResisIDta, nDcReAvIsNGCaUteRVRoEltNaTge(Aa)nd Drain Current
1.6
ID = -2.5A
VGS = -10V
1.4
1.2
1.0
-10
VDS = -10V
-8
-6
-4
TJ = -55 C
125 C
25 C
0.8 -2
0.6
-50 -25 0 25 50 75 100 125 150
FTigj,.
JUNCTION TEMPERATURE ( C)
3, On-Resistance vs Temperature
0
-2 -3
-4 -5 -6 -7
Fig.
4,
VDGrSa,inGCATuErreTnOt
SOURCE VOLTAGE (V)
vs Gate Voltage & Temperature
DS11610 Rev. C-4
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20 100 s
10 1ms
LIMIT
R DS(ON)
10ms
100ms
1
1s
10s
dc
0.1
SINVGGSLE=
-10V
PULSE
RqJA = 42 C
TA = 25 C
0.01
0.1
1.0 10 100
F-VigD.S5,,DMRaAxINim-SumOUSRaCfeEOVpOerLaTtAinGgEA(rVea)
1.0
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.001
RQJA (t) = r(t) b RQJA
RQJA = See Note 1c
P(pk)
t1
t2
TJ - TA = PPK b RQJA(t)
Duty Cycle, D = t1/t2
0.01 0.1 1.0 10 100
t1, SQUARE WAVE PULSE DURATION (seconds)
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
1000 3000
Remark: Thermal characterization performed under conditions
described in note 1c. Transient thermal response will change
depending on the circuit board design.
DS11610 Rev. C-4
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DT2955