DTC124TSA.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 DTC124TSA 데이타시트 다운로드

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Transistors
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
Digital transistors (built-in resistor)
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with
complete of the input. They also have the advantage
of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making device design easy.
!Equivalent circuit
B
R1
C
E
!External dimensions (Units : mm)
DTC124TH
1.6
0.85
(1)
(3) (2)
ROHM : EMT3 Flat lead
EIAJ : SC-89
Abbreviated symbol : 05
DTC124TE
ROHM : EMT3
EIAJ : SC-75A
(1)
(3) (2)
0.8
1.6
0.1Min.
Abbreviated symbol : 05
DTC124TUA
(1) Emitter
(2) Base
(3) Collector
(1)Emitter
(2)Base
(3)Collector
B : Base
C : Collector
E : Emitter
1.25
2.1
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
0.1~0.4
Abbreviated symbol : 05
(1)Emitter
(2)Base
(3)Collector
DTC124TKA
ROHM : SMT3
EIAJ : SC-59
1.6
2.8
Each lead has same dimensions
0.3~0.6
Abbreviated symbol : 05
(1)Emitter
(2)Base
(3)Collector
DTC124TSA
42
ROHM : SPT
EIAJ : SC-72
0.45
Taping specifications
2.5 0.5 0.45
5
(1)(2)(3)
(1)Emitter
(2)Collector
(3)Base

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Transistors
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Limits(DTC124T )
Symbol
H E UA KA SA
VCBO
50
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
5
Collector current
IC
100
Collector power dissipation Pc
150
200 300
Junction temperature
Tj
150
Storage temperature
Tstg
55 ~ +150
Unit
V
V
V
mA
mW
°C
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 50 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 5 − − V IE=50µA
Collector cutoff current
ICBO − − 0.5 µA VCB=50V
Emitter cutoff current
IEBO − − 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE(sat)
0.3 V IC/IB=5mA/0.5mA
DC current transfer ratio
hFE 100 250 600 VCE=5V,IC=1mA
Input resistance
R1 15.4 22 28.6 k
Transition frequency
Transition frequency of the device
fT 250 MHZ VCE=10V,IE=−5mA,f=100MHZ
!Packaging specifications
Package
Packaging type
Code
Part No. Basic ordering unit (pieces)
EMT3H
Taping
T2L
8000
DTC124TH
DTC124TE
DTC124TUA
DTC124TKA
DTC124TSA
EMT3
Taping
TL
3000
UMT3
Taping
T106
3000
SMT3
Taping
T146
3000
SST3
Taping
TP
5000

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Transistors
!Electrical characteristic curves
1k
VCE=5V
500
200
100 Ta=100˚C
50
25˚C
-40˚C
20
10
5
2
1
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC(A)
Fig.1 DC current gain vs. collector
current
DTC124TH / DTC124TE / DTC124TUA /
DTC124TKA / DTC124TSA
1
lC/lB=10
500m
200m
100m
Ta=100˚C
25˚C
50m -40˚C
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current