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DTC114EET1 SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Collector Current
IC
DEVICE MARKING AND RESISTOR VALUES
50
50
100
Vdc
Vdc
mAdc
Device
Marking R1 (K) R2 (K)
Shipping
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
8A
8B
8C
8D
8F
8H
8J
8K
8L
8M
10 10 3000/Tape & Reel
22 22
47 47
10 47
4.7
2.2 2.2
4.7 4.7
4.7 47
22 47
2.2 47
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NPN SILICON
BIAS RESISTOR
TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
© Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTC114EET1/D

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DTC114EET1 SERIES
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation,
FR–4 Board (1.) @ TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient (1.)
RθJA
Total Device Dissipation,
FR–4 Board (2.) @ TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient (2.)
RθJA
Junction and Storage Temperature Range
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
ICBO
ICEO
IEBO
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
Collector–Emitter Breakdown Voltage (3.) (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (3.)
V(BR)CBO
V(BR)CEO
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
hFE
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) DTC123EET1
(IC = 10 mA, IB = 1 mA) DTC143TET1
DTC143ZET1/DTC124XET1
VCE(sat)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
DTC114EET1
DTC124EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144EET1
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
VOL
Max
200
1.6
600
300
2.4
400
–55 to +150
Min
50
50
35
60
80
80
160
8.0
15
80
80
80
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ
60
100
140
140
350
15
30
200
150
140
Max
100
500
0.5
0.2
0.1
0.2
1.9
2.3
1.5
0.18
0.13
0.2
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
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2
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc

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DTC114EET1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) DTC143TET1
DTC143ZET1
VOH
4.9
Input Resistor
DTC114EET1
R1
7.0
DTC124EET1
15.4
DTC144EET1
32.9
DTC114YET1
7.0
DTC143TET1
3.3
DTC123EET1
1.5
DTC143EET1
3.3
DTC143ZET1
3.3
DTC124XET1
15.4
DTC123JET1
1.54
Resistor Ratio
DTC114EET1/DTC124EET1/DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
250
200
Typ
10
22
47
10
4.7
2.2
4.7
4.7
22
2.2
1.0
0.21
1.0
0.1
0.47
0.047
150
100
50
0
– 50
RθJA = 600°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01 0.1
t, TIME (s)
1.0
Figure 2. Normalized Thermal Response
10
Max Unit
— Vdc
13
28.6
61.1
13
6.1
2.9
6.1
6.1
28.6
2.86
1.2
0.25
1.2
0.185
0.56
0.056
k
100 1000
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3