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Transistors
DTC125TUA / DTC125TKA / DTC125TSA
Digital transistor (built-in resistor)
DTC125TUA / DTC125TKA / DTC125TSA
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power DTC125TUA / DTC125TKA
dissipation
DTC125TSA
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
200
300
150
55 ∼ +150
Unit
V
V
V
mA
mW
°C
°C
!Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC125TUA
UMT3
0A
T106
3000
DTC125TKA
SMT3
0A
T146
3000
DTC125TSA
SPT
TP
5000
!External dimensions (Units : mm)
DTC125TUA
1.25
2.1
0.1to0.4
ROHM : UMT3
EIAJ : SC-70
Each lead has same dimensions
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
DTC125TKA
1.6
2.8
0.3to0.6
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
DTC125TSA
4
2
ROHM : SPT
EIAJ : SC-72
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
(1) Emitter
(2) Collector
(3) Base
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
140
Typ.
250
200
250
Max.
0.5
0.5
0.3
600
260
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 50V
VEB = 4V
IC = 0.5mA , IB = 0.05mA
IC = 1mA , VCE = 5V
VCE = 10V , IE = -5mA , f = 100MHz
!Circuit schematic
B
R1
C
E
E : Emitter
C : Collector
B : Base