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DTD113EK
NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Value
50V
500mA
1kW
1kW
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 1kW.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistorssee inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB113EK series
6) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lOutline
SMT3
OUT
IN
GND
DTD113EK
SOT-346 (SC-59)
lInner circuit
lPackaging specifications
Part No.
Package
DTD113EK
SMT3
Package
size
(mm)
2928
Taping
code
T146
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 3,000
Marking
F21
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© 2012 ROHM Co., Ltd. All rights reserved.
1/5
2012.07 - Rev.D

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DTD113EK
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IC*1
PD *2
Tj
Tstg
Data Sheet
Values
50
-10 to +10
500
200
150
-55 to +150
Unit
V
V
mA
mW
°C
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
VI(off)
VI(on)
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 20mA
Output voltage
VO(on) IO / II = 50mA / 2.5mA
Input current
II VI = 5V
Output current
IO(off) VCC = 50V, VI = 0V
DC current gain
GI VO = 5V, IO = 50mA
Input resistance
R1 -
Resistance ratio
R2/R1
-
Transition frequency
fT *1
VCE = 10V, IE = -50mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
-
3.0
-
-
-
33
0.7
0.8
-
Typ.
-
-
0.1
-
-
-
1
1
200
Max.
0.5
-
0.3
7.2
0.5
-
1.3
1.2
-
Unit
V
V
mA
mA
-
kW
-
MHz
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© 2012 ROHM Co., Ltd. All rights reserved.
2/5
2012.07 - Rev.D

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DTD113EK
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Input voltage vs. output current
(ON characteristics)
Data Sheet
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : IO [mA]
INPUT VOLTAGE : VI(off)[V]
Fig.3 Output current vs. output voltage
500 II= 5.0mA 4.5mA 4.0mA 3.5mA
3.0mA
400 2.5mA
300 2.0mA
200 1.5mA
100
0
0
1.0mA
Ta=25ºC
0A
2 4 6 8 10
OUTPUT VOLTAGE : VO [V]
Fig.4 DC current gain vs. output current
OUTPUT CURRENT : IO [mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
3/5
2012.07 - Rev.D

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DTD113EK
lElectrical characteristic curves(Ta = 25°C)
Fig.5 Output voltage vs. output current
Data Sheet
OUTPUT CURRENT : IO [mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
4/5
2012.07 - Rev.D

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DTD113EK
lDimensions (Unit : mm)
SMT3
D
A
c
Q
e b x SA
A3
e
Data Sheet
S
b2
Patterm of terminal position areas
DIM
MILIMETERS
MIN MAX
A 1.00
1.30
A1 0.00
0.10
A3 0.25
b 0.35
0.50
c 0.09
0.25
D 2.80
3.00
E 1.50
1.80
e 0.95
HE 2.60
3.00
L1 0.30
0.60
Lp 0.40
0.70
Q 0.20
0.30
x-
0.10
y-
0.10
DIM
MILIMETERS
MIN MAX
e1 2.10
b2 0.60
l1 -
0.90
Dimension in mm/inches
INCHES
MIN MAX
- 0.051
0 0.004
0.01
0.014
0.02
0.004
0.01
0.11 0.118
0.059
0.071
0.04
0.102
0.118
0.012
0.024
0.016
0.028
0.008
0.012
- 0.004
- 0.004
INCHES
MIN MAX
0.08
- 0.024
- 0.035
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© 2012 ROHM Co., Ltd. All rights reserved.
5/5
2012.07 - Rev.D