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Bulletin PD-20745 rev. D 07/01
Ultrafast Soft Recovery Diode
60EPU04
60APU04
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
trr = 50ns (typ)
IF(AV) = 60Amp
VR = 400V
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Absolute Maximum Ratings
Parameters
VR Cathode to Anode Voltage
IF(AV)
Continuous Forward Current, TC = 127°C
IFSM Single Pulse Forward Current, TC = 25°C
IFRM ! Maximum Repetitive Forward Current
TJ, TSTG Operating Junction and Storage Temperatures
!"Square Wave, 20kHz
Max
400
60
600
120
- 55 to 175
Units
V
A
°C
60EPU04
Case Styles
60APU04
CATHODE
TO BASE
2
13
CATHODE
ANODE
TO-247AC (Modified)
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CATHODE
TO BASE
2
1
ANODE
3
ANODE
TO-247AC
1

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60EPU04/ 60APU04
Bulletin PD-20745 rev. D 07/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VBR, Vr
VF
Parameters
Breakdown Voltage,
Blocking Voltage
Forward Voltage
IR Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
Min Typ Max Units Test Conditions
400 - - V IR = 100µA
- 1.05 1.25 V IF = 60A
- 0.87 1.03 V IF = 60A, TJ = 175°C
- 0.93 1.10 V IF = 60A, TJ = 125°C
- - 50 µA VR = VR Rated
- - 2 mA TJ = 150°C, VR = VR Rated
- 50 - pF VR = 400V
- 3.5 - nH Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
trr Reverse Recovery Time
IRRM
Peak Recovery Current
Qrr Reverse Recovery Charge
- 50 60
- 85 -
- 145 -
- 8.8 -
- 15.4 -
- 375 -
- 1120 -
ns IF = 1A, diF/dt = 200A/µs, VR = 30V
TJ = 25°C
TJ = 125°C
A TJ = 25°C
IF = 60A
VR = 200V
diF /dt = 200A/µs
TJ = 125°C
nC TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
RthJC
RthCS #
Wt
Parameters
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heatsink
Weight
T Mounting Torque
#"Mounting Surface, Flat, Smooth and Greased
2
Min Typ Max
0.70
0.2
5.5
0.2
1.2 2.4
10 20
Units
K/W
g
(oz)
N*m
lbf.in
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1000
100
10
T = 175˚C
J
T = 125˚C
J
T = 25˚C
J
60EPU04/ 60APU04
Bulletin PD-20745 rev. D 07/01
1000
100
10
T J = 175˚C
125˚C
1
25˚C
0.1
0.01
0.001
0
100 200 300 400
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
T J = 25˚C
100
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.1 D = 0.01
Single Pulse
(Thermal Resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
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0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
10
3

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60EPU04/ 60APU04
Bulletin PD-20745 rev. D 07/01
180
160
140 DC
120 Square wave (D = 0.50)
80% Rated Vr applied
100
see note (3)
80
0 20 40 60 80 100
Average Forward Current - IF(AV)(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
200
Vr = 400V
Tj = 125˚C
180 Tj = 25˚C
160
140
IF = 120A
IF = 60A
IF = 40A
120
100
80
60
100
di F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
100
80
RMS Limit
60
D = 0.01
40 D = 0.02
D = 0.05
D = 0.10
20 D = 0.20
D = 0.50
DC
0
0 20 40 60 80 100
Average Forward Current - IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
3500
3000
2500
2000
Vr = 400V
Tj = 125˚C
Tj = 25˚C
IF = 120A
IF = 60A
IF = 40A
1500
1000
500
0
100 1000
di F/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1= 80% rated VR
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60EPU04/ 60APU04
Bulletin PD-20745 rev. D 07/01
Reverse Recovery Circuit
VR = 200V
L = 70µH
0.01
D.U.T.
ddiifF/d/tdt
ADJUST G
D
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
IF
0
3
trr
ta
tb
1 difF/d/dtt
2 I RRM
Q rr 4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
Q
rr
=
t
rr
xI
2
RRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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