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61090
SURFACE MOUNT (NPN)
GENERAL PURPOSE TRANSISTOR
(2N2222AUB)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Hermetically sealed
Miniature package to minimize circuit board area
Ceramic surface mount package
Footprint and pin-out matches SOT-23 packaged
transistors
MIL-PRF-19500 screening available
Applications:
Analog Switches
Signal Conditioning
Small Signal Amplifiers
High Density Packaging
DESCRIPTION
The 61090 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic
package is ideal for designs where board space and device weight are important requirements. This device is available
custom binned to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage ...............................................................................................................................................................75V
Collector-Emitter Voltage............................................................................................................................................................50V
Emitter-Collector Voltage..............................................................................................................................................................6V
Continuous Collector Current ............................................................................................................................................... 800mA
Power Dissipation (Derate at the rate of 3.33 mW/°C above 25°C) .................................................................................. 500mW
Maximum Junction Temperature..........................................................................................................................................+200°C
Operating Temperature (See part selection guide for actual operating temperature) ......................................... -65°C to +200°C
Storage Temperature............................................................................................................................................. -65°C to +200°C
Lead Soldering Temperature (vapor phase reflow for 30 seconds) .....................................................................................215°C
Package Dimensions
Schematic Diagram
ORIENTATION KEY
0.105 [2.67]
0.085 [2.16]
0.125 [3.18]
0.115 [2.92]
0.054 [1.37]
0.046 [1.17]
3
0.036 [0.91]
0.024 [0.61]
3 PLACES
21
0.024 [0.61]
0.016 [0.41]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
C3
E2
B1
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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61090
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB)
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
MIN
75
50
6
MAX
10
10
50
10
UNITS
V
V
V
nA
µA
nA
nA
TEST CONDITIONS
IC = 10µA, IE = 0
IC = 10mA, IB = 0µA
IC = 0, IE = 10µA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
VCE = 50V
VEB = 4.0V, IC =0
NOTE
hfe1 50
- VCE = 10V, IC = 0.1mA
hfe2
75 325
-
VCE = 10V, IC =1mA
Forward-Current Transfer Ratio
hfe3 100
- VCE = 10V, IC =10mA
hfe4
100 300
-
VCE = 10V, IC = 150mA
1
hfe5 30
- VCE = 10V, IC = 500mA 1
hfe6 35
- VCE = 10V, IC = 10mA @ -55°C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE (SAT)
0.30
1.0
VBE (SAT) 0.6 1.20
2.0
V
V
V
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA IB = 50mA
SMALL-SIGNAL CHARACTERISTICS
Small Signal Forward Current Transfer Ratio
Small Signal Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance (Output Open Capacitance)
Turn-On Time
Turn-Off Time
NOTES:
1. Pulse width < 300µs, duty cycle < 2.0%.
hfe
hfe
COBO
CIBO
ton
toff
50 - VCE = 10V, IC = 1mA, f = 1kHz
2.5 - VCE = 20V, IC = 20mA,
f = 100kHz
8 pf VCB = 10V, 100kHz, < f < 1 MHz
25 pf VEB = 0.5 V, 100kHz, < f < 1 MHz
35 ns
VCC = 30V, IC = 150mA,
300 ns
IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Bias Voltage-Collector/Emitter
IC 10
Collector-Emitter Voltage
VCE 5
SELECTION GUIDE
PART NUMBER
61090-001
61090-002
61090-101
61090-102
61090-300
PART DESCRIPTION
2N2222AUB PNP transistor, commercial version
2N2222AUB PNP transistor, JAN level screening
2N2222AUB PNP transistor, JANTX level screening
2N2222AUB PNP transistor, JANTXV level screening
2N2222AUB PNP transistor, JANS level screening
150
20
mA
V
1
1
1
1
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com E-MAIL: optosales@micropac.com
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