32K x 8 LOW VOLTAGE CMOS STATIC RAM
• High-speed access time: 12, 15, 20, 25 ns
• Automatic power-down when chip is deselected
• CMOS low power operation
— 345 mW (max.) operating
— 7 mW (max.) CMOS standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
• Three-state outputs
The ISSI IS61LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using ISSI's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 12 ns maximum.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (CE). The active LOW Write Enable (WE) controls
both writing and reading of the memory.
The IS61LV256 is available in the JEDEC standard 28-pin,
300-mil DIP and SOJ, plus the 450-mil TSOP package.
FUNCTIONAL BLOCK DIAGRAM
256 X 1024
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1996, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
Rev. F 0296