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IS61LV25616AL
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
ISSI®
FEBRUARY 2003
FEATURES
• High-speed access time:
— 10, 12 ns
• CMOS low power operation
• Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
DESCRIPTION
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV25616AL is packaged in the JEDEC standard
44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP and
48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE CONTROL
WE CIRCUIT
UB
LB
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/21/03
1

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IS61LV25616AL
ISSI®
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE CE OE LB UB
XHXXX
H L HXX
X L XHH
HL L LH
HL LHL
HLLLL
L LXLH
L LXHL
LLXLL
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
High-Z
DOUT
DOUT
DIN
High-Z
DIN
High-Z
DIN
DIN
VDD Current
ISB1, ISB2
ICC
ICC
ICC
PIN CONFIGURATIONS
44-Pin TSOP (Type II) and SOJ
A0
A1
A2
A3
A4
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A17
43 A16
42 A15
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 GND
33 VDD
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 NC
27 A14
26 A13
25 A12
24 A11
23 A10
PIN DESCRIPTIONS
A0-A17
I/O0-I/O15
CE
OE
WE
LB
UB
NC
VDD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/21/03

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IS61LV25616AL
ISSI®
PIN CONFIGURATIONS
44-Pin LQFP
48-Pin mini BGA
1 23 45 6
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
44 43 42 41 40 39 38 37 36 35 34
1 33
2 32
3 31
4 30
5 29
6 TOP VIEW 28
7 27
8 26
9 25
10 24
11 23
12 13 14 15 16 17 18 19 20 21 22
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A LB OE A0 A1 A2 N/C
B I/O8 UB A3 A4 CE I/O0
C I/O9 I/O10 A5
A6 I/O1 I/O2
D GND I/O11 A17 A7 I/O3 VDD
E VDD I/O12 NC A16 I/O4 GND
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
PIN DESCRIPTIONS
A0-A17
I/O0-I/O15
CE
OE
WE
LB
UB
NC
VDD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
1
2
3
4
5
6
7
8
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/21/03
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IS61LV25616AL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
VTERM Terminal Voltage with Respect to GND
TSTG Storage Temperature
PT Power Dissipation
Value
–0.5 to VDD+0.5
–65 to +150
1.0
Unit
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
ISSI®
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
10ns
VDD
3.3V +10%, -5%
3.3V +10%, -5%
12ns
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
VOH
VOL
VIH
VIL
ILI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND VIN VDD
ILO Output Leakage
GND VOUT VDD
Outputs Disabled
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
2.4
2.0
–0.3
–2
–5
–2
–5
Max.
0.4
VDD + 0.3
0.8
2
5
2
5
Unit
V
V
V
V
µA
µA
4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/21/03

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IS61LV25616AL
ISSI®
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
ICC VDD Dynamic Operating
Supply Current
ISB TTL Standby Current
(TTL Inputs)
ISB1 TTL Standby Current
(TTL Inputs)
ISB2 CMOS Standby
Current (CMOS Inputs)
Test Conditions
VDD = Max.,
Com.
IOUT = 0 mA, f = fMAX Ind.
VDD = Max.,
VIN = VIH or VIL
CE VIH, f = fMAX.
Com.
Ind.
VDD = Max.,
VIN = VIH or VIL
CE VIH, f = 0
Com.
Ind.
VDD = Max.,
CE VDD – 0.2V,
VIN VDD – 0.2V, or
VIN 0.2V, f = 0
Com.
Ind.
-10
Min. Max.
— 100
— 110
— 50
— 55
-12
Min. Max.
— 90
— 100
— 45
— 50
Unit
mA
mA
— 20
— 25
— 20
— 25
mA
— 15
— 20
— 15
— 20
mA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development
CAPACITANCE(1)
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
1
2
3
4
5
6
7
8
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/21/03
5