7001.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 7001 데이타시트 다운로드

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STB7001
900 MHz THREE GAIN LEVEL LNA
FULLY INTEGRATED 900 MHz LNA
THREE GAIN LEVELS (0dB, 18dB, 26dB typ.
@ 2.8V)
LOW NOISE FIGURE
TEMPERATURE COMPENSATED
APPLICATIONS
GSM HANDSETS
DESCRIPTION
The STB7001 is a Silicon monolithic amplifier, that
offers low noise figure and three gain levels for
900-MHz applications. STB7001 is housed in a
small industry-standard MSOP8 surface mount
package, requiring very little board space (50% re-
duction vs SO8 Package). MSOP8 dimensions
are 3mmx5mm with a 1.1mm thickness. The de-
vice is ESD protected and requires minimum ex-
ternal components in the application circuit, for the
on-chip bias and gain control . Furthermore, tem-
perature and supply voltage compensation as-
sures high stability over a wide range of operating
conditions.
MSOP8
ORDER CODE
STB7001
BRANDING
7001
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc Supply voltage
Tj Junction Temperature
Tstg Storage temperature
THERMAL DATA
Symbol
Parameter
Rth(j-a) Junction -ambient Thermal Resistance
Value
5.5
150
-40 to +85
Value
200
Unit
V
°C
°C
Unit
°C/W
January, 22 2002
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STB7001
ELECTRICAL SPECIFICATION (Tamb = 25°C, Vcc = 2.8V)
Symbol
Parameters
Test Conditions
Vcc Supply voltage
Ibias Bias current
Istby
f
Gp1,2,3
Standby current
Frequency range
Power gain
NF1,2,3
Noise figure
P1dB1,2,3 Input 1 dB Compr.Power
IIP31,2,3 Input Third Order Intercept
VSWRi
VSWRo
AZout
Input VSWR
Output VSWR
Zout LNA on/off
for Gp1(1)
Gp2(1)
Gp3(1)
for Gp1
Gp2
Gp3
for Gp1
Gp2
Gp3
for Gp1
Gp2
Gp3
for Gp1
Gp2
Gp3
Note(1) : Gp1 min gain, Gp2 mid gain and Gp3 max gain.
Min.
2.7
8
14
10
925
-3.0
16.0
24.0
Typ.
2.8
11.5
17.5
15.0
0.0
18.0
26.0
10
3.1
2.5
-15.0
-19.0
-26.5
-6.0
-11.0
-20.0
Max.
2.9
15.0
22.5
19
20
960
3.0
20.0
28.0
1.5:1
1.5:1
15
Unit
V
mA
µA
MHz
dB
dB
dBm
dBm
%
PINOUT
Pin Number
1
2
3
4
5
6
7
8
Symbol
RFin
Gnd
Vcc
ARLNA0
RFout
Gnd
GC1
GC2
Description
Evaluation circuit components
RF input
L2 = 5.1nH, C2 = n/c
Ground
Voltage supply
C4 = 8pF, L1 = 110nH, C7 = 10nF, C6 = 4.7uF
Enable for power down C3 = 10nF
RF output
C9 = 5pf, L3 = 10nH, C10 = 10nF, C11 = 100pF, L4 = 110nH
Ground
Gain selection
C5 = 10nF
Gain selection
C8 = 10nF
GAIN SELECTI0N
Gp1 Gp2 Gp3
GC1 0 0 1
GC2 0 1 1
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TEST CIRCUIT SCHEMATIC
STB7001
VCC
C6
4u7
JP1
1
2
BIAS
J1
SMA_IN
C2
n/c
VCC
L1
C7 110n
10n
VCC
S2
SW_SPDT
C3
10n
L2
5n1
C4
8p
U1
1 RF_IN
2 GND
3 VCC
4 ARLNA0
LNA
GC2
GC1
GND
RF_OUT
8
7
6
5
L3
10n
C8
10n
C5
10n
C9
5p
VCC
L4
110n
C11
100p
C10
10n
S1
VCC
SW SPDT
S3 VCC
SW SPDT
SMA_OUT
J2
C12
n/c
TEST CIRCUIT PHOTOMASTER (board dimentions 23.5x20.3mm)
TOP VIEW
BOTTOM VIEW
23.5mm
23.5mm
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