KSC5019.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 KSC5019 데이타시트 다운로드

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Low Saturation
• VCE(sat)=0.5V at IC=2A, IB=50mA
KSC5019
1 TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCES
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* PW10ms, Duty Cycle30%
Value
30
30
10
6
2
5
2
750
150
-55 ~ 150
Units
V
V
V
V
A
A
A
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
IEBO
BVCEO
BVEBO
hFE1
hFE2
VCE (sat)
VBE (on)
fT
Cob
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
VCB=30V, IE=0
VEB=6V, IC=0
IC=10mA, IB=0
IE=1mA, IC=0
VCE=1V, IC=0.5A
VCE=1V, IC=2A
IC=2A, IB=50mA
VCE=1V, IC=2A
VCE=1V, IC=0.5A
VCB=10V, IE=0, f=1MHz
Min.
10
6
140
70
Typ.
200
0.2
0.86
150
27
Max.
100
100
600
Units
nA
nA
V
V
0.5 V
1.5 V
MHz
pF
hFE Classification
Classification
hFE
L
140 ~ 240
M
200 ~ 330
N
300 ~ 450
P
420 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

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Typical Characteristics
5
I = 50mA
B
I = 40mA
B
4
I = 30mA
B
I = 20mA
B
3
EMITTER COMMON
T =25oC
a
2
I = 10mA
B
IB = 5mA
1
I = 0mA
B
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1
EMITTER COMMON
IC/IB=40
0.1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
10
IC MAX. (Pulse)
IC MAX. (DC)
1
0.1
0.01
0.01
0.1 1 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
10,000
1,000
EMITTER COMMON
VCE=1V
100
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
5
EMITTER COMMON
VCE=1V
4
3
2
1
0
0.0 0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
800
600
400
200
0
0 50 100 150
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A2, September 2002

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Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A2, September 2002

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1