KSC5200.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 KSC5200 데이타시트 다운로드

No Preview Available !

KSC5200
Audio Power Amplifier
• High Current Capability : IC=13A
• High Power Dissipation
• Wide S.O.A
• Complement to KSA1943
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1 TO-264
1.Base 2.Collector 3.Emitter
Value
230
230
5
13
1.5
130
150
- 50 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
* DC Current Gain
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter ON Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
* Pulse Test : PW=20us
IC=5mA, IE=0
IC=10mA, RBE=
IE=5mA, IC=0
VCB=230V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=7A
IC=8A, IB=0.8A
VCE=5V, IC=7A
VCE=5V, IC=1A
VCB=10V, f=1MHz
hFE Classification
Classification
hFE1
R
55 ~ 110
Min.
230
230
5
55
35
Typ.
60
0.4
1.0
30
200
Max.
5.0
5.0
160
Units
V
V
V
uA
uA
3.0 V
1.5 V
MHz
pF
O
80 ~ 160
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001

No Preview Available !

Typical Characteristics
16
IB=200mA
IB = 180mA
14 IB = 160mA
IB = 140mA
12 IB = 120mA
10 IB = 100mA
IB = 80mA
8
IB = 60mA
6
IB = 40mA
4
2
IB = 0
0
0 2 4 6 8 10 12 14 16 18 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
IC = 10 IB
1
0.1
0.01
1E-3
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
100
Figure 3. Base-Emitter Saturation Voltage
12
VCE = 5V
10
8
6
4
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2001 Fairchild Semiconductor Corporation
1000
100
VCE = 5V
10
1
1E-3
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
100
10
IC = 10IB
1
0.1
0.01
01.E00-31
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
100
Figure 4. Collector-Emitter Saturation Voltage
100
IC MAX. (Pulsed*)
10
IC MAX. (DC)
1
10ms*
100ms*
DC
0.1
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
0.01
1
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. B1, Septmeber 2001

No Preview Available !

Typical Characteristics
160
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. B1, Septmeber 2001

No Preview Available !

Package Demensions
TO-264
20.00 ±0.20
(8.30)
(8.30)
(1.00)
(2.00)
(R1.00)
(7.00) (7.00)
(0.50)
4.90 ±0.20
(1.50)
2.50 ±0.20
5.45TYP
[5.45 ±0.30]
(1.50)
3.00 ±0.20
1.00
+0.25
–0.10
5.45TYP
[5.45 ±0.30]
(1.50)
0.60
+0.25
–0.10
2.80 ±0.30
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B1, Septmeber 2001

No Preview Available !

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4