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KSC5405F
High Voltage Power Switching Applications
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation ( TC=25°C)
Junction Temperature
Storage Temperature
1000
450
9
5
10
2
4
40
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO (sus) *Collector-Emitter Sustaining Voltage
ICES
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage:
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulsed Test: PW = 300uS, duty cycle = 1.5%
IC = 100mA, IB = 0
VCE = 1000V, VBE = 0
VBE = 9V, IC = 0
VCE=5V, IC=0.6A
IC = 2.5A, IB = 0.5A
IC = 2.5A, IB = 0.5A
VCC = 250V, IC = 2.5A
IB1 = -IB2 = 0.5A
RL=100
Min.
450
10
Typ.
Max.
1
10
40
1.5
1.3
1
4
0.8
Units
V
mA
mA
V
V
µs
µs
µs
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002

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Typical Characteristics
100
IC=5IB
10
1
0.1 1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
2.0
IC=5IB
1.5
1.0
0.5
0.0
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
100
Figure 3. Base-Emitter Saturation Voltage
10
8
6
4
2
0
0 200 400 600 800 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
2.0
IC=5IB
1.5
1.0
0.5
0.0
0.01
0.1 1
10
IC[A], COLLECTOR CURRENT
100
Figure 2. Collector-Emitter Saturation Voltage
10
1
0.1
0.01
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. B, December 2002

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Package Dimensions
TO-220F
10.16 ±0.20
(7.00)
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
0.35 ±0.10
#1
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B, December 2002

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1