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KSD882
NPN Epitaxial Silicon Transistor
Recommended Applications
• Audio Frequency Power Amplifier
Featuers
• Low Speed Switcing
• Complement to KSB772.
November 2007
1 TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO
Collector-Base Voltage
BVCEO
Collector-Emitter Voltage
BVEBO
Emitter-Base Voltage
IC Collector Current(DC)
IC Collector Current(Pulse)**
IB Base Current
PD Total Device Dissipation(TC=25°C)
Total Device Dissipation(Ta=25°C)
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** PW10ms, Duty Cycle50%
Electrical Characteristics. Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
* Pulse Test: PW350µs, Duty Cycle2% Pulsed
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
IC=500uA, IE=0
IC=5mA, IB=0
IE=500uA, IC=0
VCB = 30V, IE = 0
VEB = 3V, IC = 0
VCE = 2V, IC = 20mA
VCE = 2V, IC = 1A
IC = 2A, IB = 0.2A
IC = 2A, IB = 0.2A
VCE = 5V, IE = 0.1A
VCB = 10V, IE = 0
f = 1MHz
1
Ratings
40
30
5
3
7
0.6
10
1
- 55 ~ +150
Units
V
V
V
A
A
A
W
W
°C
Min.
40
30
5
30
60
Typ.
150
160
0.3
1.0
90
45
Max.
1
1
400
0.5
2.0
Units
V
V
V
µA
µA
V
V
MHz
pF
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hFE Classification
Classification
hFE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
G
200 ~ 400
Ordering Information
Part Number
Marking
Package
Packing Method
KSD882OSTU
D882O
TO-126
TUBE
KSD882RSTU
D882R
TO-126
TUBE
KSD882YSTU
D882Y
TO-126
TUBE
KSD882GSTU
D882G
TO-126
TUBE
* 1. Affix “-S-” means the standard TO126 Package. If the affix is ”-STS-” instead of “-S-”, that means the short-lead TO126 package.
2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.
Remarks
hFE1 R grade
hFE1 O grade
hFE1 Y grade
hFE1 G grade
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
2
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Typical Characteristics
2.0
1.6 IB = 10mA
IB = 9mA
IB = 8mA
1.2 IB = 7mA
IB = 6mA
IB = 5mA
0.8
IB = 4mA
IB = 3mA
0.4
IB = 2mA
0.0 IB = 1mA
0 4 8 12 16 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1000
100
VCE = 2V
10
1E-3
0.01 0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
10
1 VBE(sat)
0.1
VCE(sat)
0.01
IC = 10 IB
1E-3
1E-3
0.01 0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
VCE = 5V
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
1000
10
IE=0
f=1MHz
ICMAX. (pulse)
1 IC MAX. (DC) Dissipation Limited
100
0.1
10
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
3
0.01
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
100
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Typical Characteristics
160
140
120
100
80
60
40
20
0
0
S/b Limited
Dissipation Limited
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 7. Derating Curve Of Safe Operating Areas
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 8. Power Derating
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
4
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TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
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ISOPLANAR™
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Quiet Series™
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TinyLogic®
TINYOPTO™
TinyPower™
FACT Quiet Series™
FACT®
FAST®
FastvCore™
Motion-SPM™
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OPTOPLANAR®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I30
© 2007 Fairchild Semiconductor Corporation
KSD882 Rev. B
5
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