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®
Data Sheet
April 18, 2005
ISL6571
FN9082.4
Complementary MOSFET Driver and
Synchronous Half-Bridge Switch
The Intersil ISL6571 provides a new approach for
implementing a synchronous rectified buck switching
regulator. The ISL6571 replaces two power MOSFETs, a
Schottky diode, two gate drivers and synchronous control
circuitry. Its main applications address high-density power
conversion circuits including multiphase-topology computer
microprocessor core power regulators, ASIC and memory
array regulators, etc. Another useful feature of the ISL6571
is the compatibility with three-state input control: left open,
the PWM input turns off both output drives. The ISL6571
operates in continuous conduction mode reducing EMI
constraints and enabling high bandwidth operation.
Ordering Information
TEMP.
PART NUMBER RANGE (°C)
PACKAGE
PKG.
DWG. #
ISL6571CR*
0 to 70 68 Ld 10x10 QFN L68.10x10A
ISL6571CRZ*
(See Note)
0 to 70
68 Ld 10x10 QFN L68.10x10A
(Pb-free)
ISL6571EVAL1 Evaluation Board
*Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free products employ special Pb-free material
sets; molding compounds/die attach materials and 100% matte tin
plate termination finish, which are RoHS compliant and compatible
with both SnPb and Pb-free soldering operations. Intersil Pb-free
products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Features
• Improved Performance over Conventional Synchronous
Buck Converter using Discrete Components
• Optimal Deadtime Provided by Adaptive Shoot-Through
• Switching Frequency up to 1MHz
- High-Bandwidth, Fast Transient Response
- Small, Low Profile Converters
• Reduced Connection Parasitics between Discrete
Components
- Low Electromagnetic Emissions
• Low Profile, Low Thermal Impedance Packaging
- High Power Density Applications
• QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
• Pb-Free Available (RoHS Compliant)
Applications
Multiphase Power Regulators
Low-Voltage Switchmode Power Conversion
• High-Density Power Converters
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003-2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.

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Pinout
ISL6571
ISL6571 (QFN) TOP VIEW
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
PHASE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
69
PHASE
71
GND
70
VIN
51 NC
50 GND
49 NC
48 PWM
47 BOOT
46 GND
45 PHASE
44 VIN
43 VIN
42 VIN
41 VIN
40 VIN
39 VIN
38 VIN
37 VIN
36 VIN
35 VIN
2 FN9082.4

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VCC
POWER-ON
RESET (POR)
PVCC
DRIVE1
CONTROL
GATE
5V
LOGIC
CONTROL
PWM
10K
PVCC
10K DRIVE2
VIN
BOOT
UFET
PHASE
LGATE
LFET
GND
FIGURE 1. BLOCK DIAGRAM
LGATE1 PGND

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+12VIN
+5VIN
PWM
ISL6571
CONTROL
AND
DRIVERS
ISL6571
CBOOT
LOUT
VOUT
COUT
FIGURE 2. SIMPLIFIED POWER SYSTEM DIAGRAM
+12VIN
+5VIN
20
VCC
18 PWM4
17 ISEN4
PWM1 15
ISEN1 16
POWER
GOOD
RFS
PWM2 14
19 PGOOD
ISEN2 13
U1
HIP6301
8 FS/DIS
PWM3 11
ISEN3 12
5 VID0
4 VID1
3 VID2
2 VID3
1 VID4
GND
9
COMP
6
FB 7
VSEN
10
C2
C1
R2
ROFFSET
R1
LIN
VCC PVCC BOOT
PWM
VIN
U2
ISL6571
LGATE1
PHASE
LGATE GND PGND
VCC PVCC BOOT
PWM
VIN
U3
ISL6571
LGATE1
PHASE
LGATE GND PGND
VCC PVCC BOOT
PWM
VIN
U4
ISL6571
LGATE1
PHASE
LGATE GND PGND
FIGURE 3. TYPICAL APPLICATION
4
+ CIN1
CBOOT1
LOUT1
RSNS1
+ CIN2
CBOOT2
LOUT2
RSNS2
+
COUT
VOUT
+ CIN3
CBOOT3
LOUT3
RSNS3
FN9082.4

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ISL6571
Absolute Maximum Ratings
Bias Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+15V
Driver Supply, PVCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10.5V
Conversion Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . VCC+0.3V
DRIVE1 Voltage, VBOOT - VPHASE. . . . . . . . . . . . . . . . . . . . . .+15V
Input Voltage, PWM . . . . . . . . . . . . . . . . . . . . . . . . GND -0.3V to 7V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2
Recommended Operating Conditions
Control and Conversion Voltage, VCC, VIN. . . . . . . . . . +12V ±10%
MOSFET Bias Supply, PVCC . . . . . . . . . . . . . . . . . . . +5V to +10V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Junction Temperature Range. . . . . . . . . . . . . . . . . . . . 0°C to 125°C
Thermal Information
Thermal Resistance (Typical, Note 1)
θJC (°C/W)
Pad 69 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.3
Pad 70 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.0
Pad 71 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.0
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 125°C
Maximum Storage Temperature Range . . . . . . . . . . . -40°C to 125°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJC is measured with the component mounted on a typical application PCB. A separate θJC value is provided for each of the three exposed die
pads (#69, 70, 71). Each value should be used in combination with the power dissipated by only the individual die mounted on that pad.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
SUPPLY CURRENT
Nominal Bias Supply Current
POWER-ON RESET
IVCC
PWM Open
- 2.5 3.6
Rising VCC Threshold
9.70 9.95 10.40
VCC Threshold Hysteresis
- 2.40 -
MOSFET DRIVER
Input Impedance
PWM Rising Threshold
ZIN
-5-
- - 3.80
PWM Falling Threshold
1.30 -
-
PWM-to-PHASE Low-to-High Propagation
Delay
tPLH
- 80 -
PWM-to-PHASE High-to-Low Propagation
Delay
tPHL
- 56 -
Shutdown Window
1.60 - 3.40
Shutdown Holdoff Time
UPPER MOSFET (UFET)
tSH
- 230 -
Drain-to-Source ON-State Resistance
ON-State Drain Current
LOWER MOSFET (LFET)
rDS(ON)
VBOOT - VPHASE = 5V
VBOOT - VPHASE = 10V
VBOOT - VPHASE = 5V
12.8
7.70
25
13.5
9.20
-
18.2
12.7
-
Drain-to-Source ON-State Resistance
ON-State Drain Current
rDS(ON)
VPVCC = 5V
VPVCC = 10V
VPVCC = 5V
4.10
3.40
25
4.80
4.05
-
5.55
4.70
-
UNITS
mA
V
V
k
V
V
ns
ns
V
ns
m
m
A
m
m
A
5 FN9082.4