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ISP817X, ISP827X, ISP847X
ISP817, ISP827, ISP847
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l UL recognised, File No. E91231
ISP817X
ISP817
2.54 Dimensions in mm
'X' SPECIFICATION APPROVALS
l VDE 0884 in 3 available lead form : -
7.0 1
6.0 2
4
3
- STD
- G form
1.2
- SMD approved to CECC 00802
l Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
5.08
4.08 4.0
3.0
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
3.0
ISP827X
0.5
0.5
3.35
7.62
13°
Max
0.26
DESCRIPTION
ISP827
The ISP817, ISP827, ISP847 series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
2.54
7.0
6.0
1
2
3
4
8
7
6
5
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
1.2
10.16
9.16
4.0
3.0
7.62
Tape&reel - add SMT&R after part no.
l High Current Transfer Ratio (50% min)
l High Isolation Voltage (5.3kVRMS ,7.5kVPK )
l High BVCEO ( 35Vmin )
l All electrical parameters 100% tested
3.0
0.5
3.35
0.5
0.26
1
13°
Max
16
l Custom electrical selections available
APPLICATIONS
l Computer terminals
l Industrial systems controllers
ISP847X
ISP847
2.54
2 15
3 14
4 13
l Measuring instruments
5 12
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
1.2
7.0 6
6.0 7
8
11
10
9
1.2
0.6
1.4
0.9 0.26
10.2
9.5 10.16
20.32
19.32
4.0
3.0
0.5
7.62
13°
Max
3.0
0.5 3.35
0.26
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
26/7/99
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92275A-AAS/A2

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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BV
ECO
Power Dissipation
35V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Output
Coupled
Forward Voltage (VF)
Reverse Voltage (V )
R
Reverse Current (IR)
1.2
6
Collector-emitter Breakdown (BV )
CEO
( Note 2 )
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (I )
CEO
35
6
Current Transfer Ratio (CTR) (Note 2)
ISP817, ISP827, ISP847
50
ISP817A,ISP827A,ISP847A
80
ISP817B,ISP827B,ISP847B
130
ISP817C,ISP827C,ISP847C
200
ISP817D,ISP827D,ISP847D
300
ISP817GB, ISP827GB, ISP847GB 100
ISP817BL, ISP827BL, ISP847BL
200
1.4 V
V
10 µA
V
V
100 nA
600 %
160 %
260 %
400 %
600 %
600 %
600 %
Collector-emitter Saturation VoltageVCE (SAT)
Input to Output Isolation Voltage V 5300
ISO
7500
Input-output Isolation Resistance R 5x1010
ISO
Output Rise Time tr
Output Fall Time tf
4
3
0.2 V
V
RMS
VPK
18 µs
18 µs
IF = 20mA
I
R
=
10µA
VR = 6V
I = 1mA
C
IE = 100µA
V = 20V
CE
5mA I , 5V V
F CE
5mA IF , 5V VCE
5mA I , 5V V
F CE
5mA IF , 5V VCE
5mA IF , 5V VCE
5mA I , 5V V
F CE
5mA I , 5VV
F CE
20mA IF , 1mA IC
See note 1
See note 1
V = 500V (note 1)
IO
V = 2V ,
CE
IC = 2mA, RL = 100
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
26/7/99
DB92275A-AAS/A2

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Collector Power Dissipation vs. Ambient Temperature
200
150
100
Collector-emitter Saturation
Voltage vs. Forward Current
6
5 TA = 25°C
4
3
50
0
-30
0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
60
50
40
30
20
10
0
-30
0 25 50 75 100 125
Ambient temperature TA ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
0.12
I = 20mA
F
0.10 IC = 1mA
0.08
0.06
0.04
0.02
0
-30
0 25 50 75 100
Ambient temperature TA ( °C )
26/7/99
2
1
0
0
5 10
Forward current IF (mA)
15
Collector Current vs. Collector-emitter Voltage
50
50mA
TA = 25°C
30mA
40 20mA
15mA
30
10mA
20
10 IF = 5mA
0
02
4
68
Collector-emitter voltage V ( V )
CE
10
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
VCE = 5V
TA = 25°C
2
5 10 20
50
Forward current IF (mA)
DB92275A-AAS/A2