IXFK170N10.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 IXFK170N10 데이타시트 다운로드

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HiPerFETTM
Power MOSFET
Single MOSFET Die
Preliminary data
IXFN170N10
IXFK170N10
VDSS
100V
100V
ID25
170A
170A
RDS(on)
10mW
10mW
trr
200ns
200ns
TO-264 AA (IXFK)
Symbol
Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
ID125„
IDM‚
IAR
EAR
dv/dt
P
D
TJ
T
JM
T
stg
T
L
V
ISOL
M
d
TJ = 25°C to 150°C
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
TC = 125°C
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
IXFK
IXFN
170N10
170N10
100 100 V
100 100 V
±20 ±20 V
±30 ±30 V
170ƒ
76
680
170
170 A
NA
680 A
170 A
60 60 mJ
5 5 V/ns
560 600 W
-55 ... +150°C
150
-55 ... +150°C
°C
300 N/A
°C
N/A
2500
V~
N/A
3000
V~
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS= 0 V, ID = 3mA
VDSS temperature coefficient
VGS(th)
VDS = VGS, ID = 8mA
VGS(th) temperature coefficient
IGSS VGS= ±20V, VGS = 0V
IDSS VDS= 0.8 • VDSS V
VGS= 0 V
RDS(on)
VGS= 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Min.
100
2
TJ = 25°C
TJ = 125°C
Characteristic Values
Typ. Max.
0.077
V
%/K
4V
-0.183
%/K
±200 nA
400 mA
2 mA
10 mW
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
· International standard packages
· Encapsulating epoxy meets
UL94V-0, flammability classification
· miniBLOC with Aluminium nitride
isolation
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97505D (7/00)
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IXFK170N10 IXFN170N10
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g
fs
C
iss
Coss
C
rss
td(on)
t
r
td(off)
t
f
Qg(on)
Q
gs
Qgd
V = 10 V; I = 0.5 • I , pulse test
DS D D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
V = 10 V, V = 0.5 • V , I = 0.5 • I
GS
DS
DSS D
D25
RG = 1 W (External),
V = 10 V, V = 0.5 • V , I = 0.5 • I
GS
DS
DSS D
D25
65
10,300
2,200
1,200
40
90
158
79
515
62
276
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
RthJC
R
thCK
RthJC
R
thCK
TO-264 AA
TO-264 AA
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.22 K/W
0.15 K/W
0.21 K/W
0.05 K/W
Source-Drain Diode
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
IS VGS = 0
ISM Repetitive;
pulse width limited by TJM
170 A
680 A
VSD IF = 100 A, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5 V
trr 175 ns
QRM
IF = 50 A, -di/dt = 100 A/ms, VR = 100 V
1.1
mC
I
12.6
A
RM
Notes:
1. RGS = 1 MW
2. Pulse width limited by TJM.
3. Chip capability
4. Current limited by external leads
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFK170N10 IXFN170N10
Figure 1. Output Characteristics at 25OC
300
250
TJ=25OC
200
VGS=10V
9V
8V
7V
150
6V
100
5V
50
0
0 2 4 6 8 10
VDS - Volts
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
1.8
VGS = 10V
1.6
TJ = 125OC
1.4
1.2 TJ = 25OC
1.0
0.8
0.6
0
50 100 150 200 250 300
ID - Amperes
Figure 5. Drain Current vs. Case Temperature
Figure 2. Output Characteristics at 125OC
300
250
TJ=125OC
VGS=10V
9V
8V
200 7V
150
6V
100
5V
50
0
0 2 4 6 8 10
VDS - Volts
Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ
2.2
VGS=10V
2.0
1.8
ID=170A
1.6
ID=85A
1.4
1.2
1.0
25 50 75 100 125
TJ - Degrees C
Figure 6. Admittance Curves
150
200
175
150
125
100
75
50
25
0
-50 -25
0 25 50 75 100 125 150
TC - Degrees C
100
80
60
40
20
0
0
TJ = 125oC
TJ = 25oC
2 4 6 8 10
VGS - Volts
© 2000 IXYS All rights reserved
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IXFK170N10 IXFN170N10
Figure 7. Gate Charge
12
10
Vds= 50V
ID= 85A
IG=10mA
8
6
Figure 8. Capacitance Curves
18000
15000
12000
f = 1MHz
9000
Ciss
4
2
0
0 100 200 300 400 500 600
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
6000
3000
0
0
Coss
Crss
10 20 30 40
VDS - Volts
Figure10. Forward Bias Safe Operating Area
300
170
250 1 00
200
150
100
50
TJ = 125OC
TJ = 25OC
10
TC = 25OC
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Volts
1
1
10
VDS - Volts
Figure 11. Transient Thermal Resistance
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10-3
10-2
10-1
Pulse Width - Seconds
100
1 ms
10
ms
100
ms
DC
1 00
101
© 2000 IXYS All rights reserved
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