IXTT11P50.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 IXTT11P50 데이타시트 다운로드

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Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH/IXTT 10P50
IXTH/IXTT 11P50
VDSS
I RD25 DS(on)
-500 V -10 A 0.90
-500 V -11 A 0.75
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TC = 25°C
TC = 25°C
Maximum Ratings
-500
-500
V
V
±20 V
±30 V
10P50
11P50
10P50
11P50
10P50
11P50
-10
-11
-40
-44
-10
-11
A
A
A
A
A
A
30 mJ
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TO-247 AD (IXTH)
D
TO-268 (IXTT) Case Style
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
(TAB)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
TO-247 AD
TO-268
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = -250 µA
BVDSS Temperature Coefficient
VDS = VGS, ID = -250 µA
VGS(th) Temperature Coefficient
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = -10 V, ID = 0.5 • ID25
10P50
11P50
RDS(on) Temperature Coefficient
-500
0.054
-3.0 -5.0
-0.122
±100
-200
-1
0.90
0.75
0.6
V
%/K
V
%/K
nA
µA
mA
%/K
Features
z International standard packages
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2002 IXYS All rights reserved
94535F (7/02)

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IXTH/IXTT 10P50
IXTH/IXTT 11P50
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = -10 V; ID = ID25, pulse test
VGS = 0 V, VDS = -25 V, f = 1 MHz
59
4700
430
135
S
pF
pF
pF
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 4.7 (External)
33
27
35
35
ns
ns
ns
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
160
46
92
nC
nC
nC
(TO-247)
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0
10P50
11P50
-10 A
-11 A
ISM Repetitive; pulse width limited by TJM 10P50
11P50
-40 A
-44 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
-3 V
trr IF = IS, di/dt = 100 A/µs
500 ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025