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DISCRETE SEMICONDUCTORS
DATA SHEET
J111; J112; J113
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
July 1993

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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
High speed switching
Interchangeability of drain and
source connections
Low RDS on at zero gate voltage
PINNING
1 = gate
2 = source
3 = drain
Note: Drain and source are
interchangeable.
handbook, half1pa2ge
3
g
MAM042
d
s
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA
Drain-source voltage
Drain current
VDS = 15 V; VGS = 0
Total power dissipation
up to Tamb = 50 °C
Gate-source cut-off voltage
VDS = 5 V; ID = 1 µA
Drain-source on-state resistance
VDS = 0.1 V; VGS = 0
±VDS
max.
IDSS
min.
Ptot
VGS off
max.
min.
max.
RDS on
max.
J111
40
J112
40
J113
40 V
20 5 2 mA
400 400
31
10 5
400 mW
0.5 V
3V
30 50 100
July 1993
2

No Preview Available !

Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
J111; J112; J113
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate forward current (DC)
Total power dissipation
±VDS
VGSO
VGDO
IG
max.
max.
max.
max.
up to Tamb = 50 °C
Storage temperature range
Junction temperature
Ptot max.
Tstg
Tj max.
THERMAL RESISTANCE
From junction to ambient in free air
Rth j-a
=
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Gate reverse current
VGS = 15 V; VDS = 0
Drain cut-off current
VDS = 5 V; VGS = 10 V
Drain saturation current
VDS = 15 V; VGS = 0
Gate-source breakdown voltage
IG = 1 µA; VDS = 0
Gate-source cut-off voltage
VDS = 5 V; ID = 1 µA
Drain-source on-state resistance
VDS = 0.1 V; VGS = 0
IGSS
IDSX
IDSS
V(BR)GSS
VGS off
RDSon
max.
max.
min.
min.
min.
max.
max.
J111
1
1
20
40
3
10
30
40 V
40 V
40 V
50 mA
400 mW
65 to + 150 °C
150 °C
250 K/W
J112 J113
1 1 nA
1 1 nA
5 2 mA
40 40 V
1 0.5 V
5 3V
50 100
July 1993
3