J112.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 J112 데이타시트 다운로드

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January 2015
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /
MMBFJ113
N-Channel Switch
Features
• This device is designed for low level analog switching,
sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51
• Source & Drain are interchangeable.
G
SD
TO-92
Figure 1. J111 / J112 / J113 Device Package
Ordering Information
Part Number
J111
J111_D26Z
J111_D74Z
J112
J112_D26Z
J112_D27Z
J112_D74Z
J113
J113_D74Z
J113_D75Z
MMBFJ111
MMBFJ112
MMBFJ113
Top Mark
J111
J111
J111
J112
J112
J112
J112
J113
J113
J113
6P
6R
6S
G
SOT-23
S
Note: Source & Drain
D are interchangeable
Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113
Device Package
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Bulk
Tape and Reel
Ammo
Bulk
Tape and Reel
Tape and Reel
Ammo
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
www.fairchildsemi.com

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Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
35
-35
50
-55 to 150
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max.
Symbol
Parameter
J111 / J112 /
J113(3)
MMBFJ111 /
MMBFJ112 /
MMBFJ113(4)
Unit
Total Device Dissipation
PD Derate Above 25°C
625 350 mW
5.0 2.8 mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
125 °C/W
200 357 °C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
2
www.fairchildsemi.com

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Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
IG = -1.0 μA, VDS = 0
VGS = -15 V, VDS = 0
VGS(off) Gate-Source Cut-Off Voltage
VDS = 15 V, ID = 1.0 μA
111
112
113
ID(off) Drain Cutoff Leakage Current
On Characteristics
VDS = 5.0 V, VGS = -10 V
IDSS Zero-Gate Voltage Drain Current(5) VDS = 15 V, VGS = 0
111
112
113
rDS(on) Drain-Source On Resistance
VDS 0.1 V, VGS = 0
111
112
113
Small Signal Characteristics
Cdg(on)
Csg(on)
Cdg(off)
Csg(off)
Drain-Gate &Source-Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
VDS = 0, VGS = 0, f = 1.0 MHz
VDS = 0, VGS = -10 V, f = 1.0 MHz
VDS = 0, VGS = -10 V, f = 1.0 MHz
Note:
5. Pulse test: pulse width 300 μs, duty cycle 2%.
Min.
-35
-3.0
-1.0
-0.5
20
5.0
2.0
Max. Unit
-1.0
-10.0
-5.0
-3.0
1.0
V
nA
V
nA
mA
30
50 Ω
100
28 pF
5.0 pF
5.0 pF
© 1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5
3
www.fairchildsemi.com