J174.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 J174 데이타시트 다운로드

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J174
J175
J176
J177
MMBFJ175
MMBFJ176
MMBFJ177
SG D
TO-92
G
SOT-23 S
Mark: 6W / 6X / 6Y
D
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG
VGS
IGF
TJ ,Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
- 30
30
50
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
J174 - J177
350
2.8
125
*MMBFJ175
225
1.8
357 556
Units
mW
mW /°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
J174-177, Rev. A

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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
P-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
B(BR)GSS
Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current*
rDS(on)
Drain-Source On Resistance
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IG = 1.0 µA, VDS = 0
30 V
VGS = 20 V, VDS = 0
1.0 nA
VDS = - 15 V, ID = - 10 nA
J174
J175
J176
J177
5.0
3.0
1.0
0.8
10
6.0
4.0
2.5
V
V
V
V
VDS = - 15 V, IGS = 0
VDS 0.1 V, VGS = 0
J174 - 20 - 100
J175 - 7.0
- 60
J176 - 2.0
- 25
J177 - 1.5
- 20
J174
85
J175
125
J176
250
J177
300
mA
mA
mA
mA
Typical Characteristics
Common Drain-Source
-20
T A= 25°C
TYP V GS(off) = 4.5 V
-16
0.5 V
V GS = 0 V
-12
1.0 V
1.5 V
-8
2.0 V
-4 2.5 V 3.0 V 3.5 V
0
0 -1 -2 -3 -4 -5
VDS - DRAIN-SOURCE VOLTAGE (V)
Parameter Interactions
100
1,000
50 500
I DSS
r DS g fs
10 100
5 50
I DSS , g fs @ VDS = 15V,
V GS = 0 PULSED
r DS @ -100 mV, VGS = 0
V GS(off) @ V DS = - 15V,
I D = - 1.0 µA
1 10
12
5 10
VGS (OFF) - GATE CUTOFF VOLTAGE (V)

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Typical Characteristics (continued)
Transfer Characteristics
-32
V DS = - 15 V
VGS(off) = - 4.5 V
-24 - 55°C
25°C
125°C
-16 VGS(off) = 2.5 V
- 55°C
25°C
125°C
-8
0
01234
VGS - GATE-SOURCE VOLTAGE (V)
P-Channel Switch
(continued)
Transfer Characteristics
16
V DS = - 15 V
VGS(off) = - 4.5 V
- 55°C
12 25°C
125°C
VGS(off) = 2.5 V
8 - 55°C
25°C
125°C
4
0
01234
VGS - GATE-SOURCE VOLTAGE (V)
Normalized Drain Resistance
vs Bias Voltage
100
50
VGS(off) @ 5.0V, 10 µA
r DS
20
r DS =
1
-___V_G_S___
10 V GS(off)
5
2
1
0 0.2 0.4 0.6 0.8 1
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
1000
100
10
Output Conductance
vs Drain Current
f = 1.0 kHz
V GS(off) = - 4.5V
-5.0V -5.0V
-10V
-20V
-10V
-20V
V GS(off) = - 2.5V
_
1
0.01
_ 0.1
_1
I D - DRAIN CURRENT (mA)
_ 10
Transconductance
vs Drain Current
10
VGS(off) = 2.5V
5 25°C
V GS(off) = 6.0V
- 55°C
1
25°C
125°C
0.5
V DG = -15V
f = 1.0 kHz
0_.10.1
_1 _10
I D - DRAIN CURRENT (mA)
_ 100
Capacitance vs Voltage
100
f = 0.1 - 1.0 MHz
10 C is (V DS = -15V)
5 C rs (VDS = -15V)
1
0 4 8 12 16 20
V GS - GATE-SOURCE VOLTAGE (V)

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Typical Characteristics (continued)
P-Channel Switch
(continued)
Noise Voltage vs Frequency
100
50
I D = - 0.2 mA
10 I D = 5.0 mA
5
V DG = - 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2f @ f 1.0 kHz
1
0.01
0.1
1
10
f - FREQUENCY (kHz)
100
1000
500
100
50
Channel Resistance
vs Temperature
V GS(off) = 2.5V
V GS(off) = 4.5V
V GS(off) = 8.0V
VDS = -100 mV
VGS = 0
10
-50
0
50 100 150
T A - AMBIENT TEMPERATURE (oC)
350
300
250
200
150
100
50
0
0
Power Dissipation vs
Ambient Temperature
TO-92
SOT-23
25 50 75 100 125 150
TEMPERATURE ( oC)

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