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DISCRETE SEMICONDUCTORS
DATA SHEET
J174; J175;
J176; J177
P-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
April 1995

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Philips Semiconductors
P-channel silicon field-effect transistors
Product specification
J174; J175;
J176; J177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections.
PINNING
1 = source
2 = gate
3 = drain
Note: Drain and source are
interchangeable.
handbook, half1pa2ge
3
g
MAM388
d
s
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
up to Tamb = 50 °C
Drain current
VDS = 15 V; VGS = 0
Drain-source ON-resistance
VDS = 0.1 V; VGS = 0
± VDS
VGSO
IG
max.
max.
max.
30
30
50
V
V
mA
Ptot
IDSS
max.
min.
max.
400
J174
20
135
J175
7
70
J176
2
35
mW
J177
1.5 mA
20 mA
RDS on max.
85
125
250
300
April 1995
2

No Preview Available !

Philips Semiconductors
P-channel silicon field-effect transistors
Product specification
J174; J175;
J176; J177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate current (DC)
Total power dissipation
± VDS
VGSO
VGDO
IG
up to Tamb = 50 °C
Storage temperature range
Junction temperature
Ptot
Tstg
Tj
max.
max.
max.
max.
max.
max.
30 V
30 V
30 V
50 mA
400
65 to +150
150
mW
°C
°C
THERMAL RESISTANCE
From junction to ambient in free air
Rth j-a
=
250 K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Gate cut-off current
VGS = 20 V; VDS = 0
Drain cut-off current
VDS = 15 V; VGS = 10 V
Drain current
VDS = 15 V; VGS = 10 V
Gate-source breakdown voltage
IG = 1 µA; VDS = 0
Gate-source cut-off voltage
ID = 10 nA; VDS = 15 V
Drain-source ON-resistance
VDS = 0.1 V; VGS = 0
J174 J175 J176 J177
IGSS
IDSX
IDSS
max.
11
1 1 nA
max.
11
1 1 nA
min.
max.
20 7
135 70
2 1.5 mA
35 20 mA
V(BR)GSS min.
VGS off
min.
max.
30 30 30 30 V
53
10 6
1 0.8 V
4 2.25 V
RDSon
max.
85 125 250 300
April 1995
3