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DISCRETE SEMICONDUCTORS
DATA SHEET
J210; J211; J212
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
1997 Dec 01

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Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
FEATURES
High speed switching
Interchangeability of drain and source connections
High impedance.
APPLICATIONS
Analog switches
Choppers, multiplexers and commutators
Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
TO-92 (SOT54) package.
PINNING - TO-92 (SOT54)
PIN SYMBOL
DESCRIPTION
1 g gate
2 s source
3 d drain
1
handbook, halfpage2
3
g
MAM197
d
s
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
Marking codes:
J210: J210.
J211: J211.
J212: J212.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J210
J211
J212
IDSS drain current
J210
J211
J212
Ptot
yfs
total power dissipation
common-source transfer admittance
J210
J211
J212
CONDITIONS
ID = 1 nA; VDS = 15 V
VGS = 0; VDS = 15 V
Tamb 50 °C
VGS = 0; VDS = 15 V
MIN. MAX. UNIT
− ±25 V
1 3 V
2.5 4.5 V
4 6 V
2 15 mA
7 20 mA
15 40 mA
400 mW
4 12 mS
6 12 mS
7 12 mS
1997 Dec 01
2

No Preview Available !

Philips Semiconductors
N-channel field-effect transistors
Product specification
J210; J211; J212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
VGSO
VDGO
IG
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
gate-source voltage
drain-gate voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
open drain
open source
Tamb 50 °C; note 1; see Fig.13
MIN.
65
MAX.
±25
25
25
10
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
250
K/W
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2.
1997 Dec 01
3