J309.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 J309 데이타시트 다운로드

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CORPORATION
N-Channel JFET
High Frequency Amplifier
J308 – J310 / SST308 – SST310
FEATURES
Industry Standard Part in Low Cost Plastic Package
High Power Gain
Low Noise
Dynamic Range Greater Than 100dB
•• Easily Matched to 75Input
APPLICATIONS
VHF/UHF Amplifiers
Oscillators
•• Mixers
PIN CONFIGURATION
TO-92
D SG
5021
SOT-23
G
D
S
PRODUCT MARKING (SOT-23)
SST308
Z08
SST309
Z09
SST310
Z10
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Continuous Forward Gate Current . . . . . . . . . . . . . . . . -10mA
Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC
Operating Temperature Range . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . 3.27mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
Temperature Range
J308-310 Plastic TO-92
SST308-310 Plastic SOT-23
-55oC to +135oC
-55oC to +135oC
For Sorted Chips in Carriers see U308 series.

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J308 – J310 / SST308 – SST310
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
308 309
MIN TYP MAX MIN TYP MAX MIN
310
UNITS TEST CONDITIONS
TYP MAX
BVGSS
Gate-Source Breakdown
Voltage
-25
-25
-25
V IG = -1µA, VDS = 0
IGSS Gate Reverse Current
VGS(off)
IDSS
Gate-Source
Cutoff Voltage
Saturation Drain Current
(Note 1)
-1.0
12
-1.0
-1.0
-6.5 -1.0
60 12
-1.0
-1.0
-4.0 -2.0
30 24
-1.0 nA VGS = -15V,
-1.0 µA VDS = 0
TA = 125o
-6.5 V VDS = 10V, ID = 1nA
60 mA VDS = 10V, VGS = 0
VGS(f)
Gate-Source
Forward Voltage
1.0 1.0
1.0 V VDS = 0, IG = 1mA
gfs
Common-Source Forward
Transconductance
8,000 17,000
10,000 17,000
8,000 17,000
gos
Common-Source Output
Conductance
gfg
Common-Gate Forward
Transconductance
gog
Common Gate Output
Conductance
250
13,000
150
250
13,000
150
250
12,000
VDS = 10V
µS ID = 10mA f = 1kHz
(Note 2)
150
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
SYMBOL
Cgd
Cgs
en
PARAMETER
Gate-Drain Capacitance
Gate-Source Capacitance
Equivalent Short-Circuit
Input Noise Voltage
308 309 310
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
TEST CONDITIONS
1.8 2.5
4.3 5.0
1.8 2.5
4.3 5.0
1.8 2.5
4.3 5.0
pF
VDS = 10V,
VGS = -10
f = 1MHz
(Note 2)
10
10
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f = 100Hz
(Note 2)
Re(Vfs)
Re(Vfg)
Re(Vis)
Common-Source Forward
Transconductance
Common-Gate Input
Conductance
Common-Source Input
Conductance
12
14
0.4
Re(Vos)
Common-Source Output
Conductance
0.15
Gpg
Common-Gate Power Gain
at Noise Match
16
NF Noise Figure
1.5
Gpg
Common-Gate Power Gain
at Noise Match
11
NF Noise Figure
2.7
NOTES: 1. Pulse test PW 300µs, duty cycle 3%.
2. For design reference only, not 100% tested.
12
14
0.4
0.15
16
1.5
11
2.7
12
14
0.4
0.15
16
1.5
11
2.7
µS
VDS = 10V,
ID = 10mA
(Note 2)
f = 105MHz
dB
f = 450MHz