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J309, J310
Preferred Device
JFET VHF/UHF Amplifiers
N−Channel — Depletion
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Source Voltage
Gate −Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above = 25°C
VDS
VGS
IGF
PD
25 Vdc
25 Vdc
10 mAdc
350 mW
2.8 mW/°C
Junction Temperature Range
TJ −65 to +125 °C
Storage Temperature Range
Tstg −65 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
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1 DRAIN
3
GATE
2 SOURCE
TO−92
CASE 29−11
1
2
STYLE 5
3
MARKING DIAGRAM
J3xx
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1
J3xx = Device Code
xx = 09 or 10
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
J309/D

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J309, J310
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0, TA = 25°C)
(VGS = −15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J309
J310
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J309
J310
Gate−Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Common−Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J309
J310
Common−Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Gate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Gate Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Common−Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Common−Gate Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Common−Gate Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Gate−Drain Capacitance
(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)
Gate−Source Capacitance
(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Equivalent Short−Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
Re(yis)
Re(yos)
Gpg
Re(yfs)
Re(yig)
gfs
gos
gfg
gog
Cgd
Cgs
en
Min Typ Max Unit
−25 −
− Vdc
− − −1.0 nAdc
− − −1.0 mAdc
Vdc
−1.0 − −4.0
−2.0 − −6.5
mAdc
12 − 30
24 − 60
− − 1.0 Vdc
mmhos
− 0.7 −
− 0.5 −
− 0.25 − mmhos
− 16 − dB
− 12 − mmhos
− 12 − mmhos
mmhos
10000 − 20000
8000
− 18000
− − 250 mmhos
mmhos
− 13000 −
− 12000 −
mmhos
− 100 −
− 150 −
− 1.8 2.5 pF
− 4.3 5.0 pF
− 10 − nVń ǸHz
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J309, J310
ORDERING INFORMATION
Device
Package
Shipping
J309
J309G
TO−92
TO−92
(Pb−Free)
1000 Units / Bulk
J310
J310G
TO−92
TO−92
(Pb−Free)
1000 Units / Bulk
J310RLRP
J310RLRPG
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Ammo Box
J310ZL1
J310ZL1G
TO−92
TO−92
(Pb−Free)
2000 Units / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
70
60
VDS = 10 V
50
IDSS
40 +25 °C
70
TA = −55°C
+25 °C
60
50
40
30 +150°C 30
20
+25 °C
20
−55 °C
10 +150°C 10
−5.0 −4.0 −3.0 −2.0 −1.0
ID − VGS, GATE−SOURCE VOLTAGE (VOLTS)
IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
0
0
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
35
30 VDS = 10 V
f = 1.0 MHz
25
TA = −55°C
+25 °C
20
+150°C
15 +25 °C
10 −55 °C
+150°C
5.0
0
5.0 4.0 3.0 2.0 1.0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
0
Figure 2. Forward Transconductance
versus Gate−Source Voltage
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J309, J310
100 k
10 k
1.0 k
Yfs Yfs
100
1.0 k
VGS(off) = −2.3 V =
10
Yos VGS(off) = −5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 3. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
30
24 VDS = 10 V
ID = 10 mA
TA = 25°C
18
3.0
2.4
Y11
1.8
12 Y21 1.2
6.0 Y22 0.6
Y12
0
100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 5. Common−Gate Y Parameter
Magnitude versus Frequency
10 120
RDS
96
7.0
72
Cgs
4.0 48
1.0
0
10
Cgd
9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
24
0
0
Figure 4. On Resistance and Junction
Capacitance versus Gate−Source Voltage
|S21|, |S11|
0.85 0.45
|S12|, |S22|
0.060 1.00
0.79 0.39
0.73 0.33
0.67 0.27
VDS = 10 V
ID = 10 mA
TA = 25°C
S22
S21
0.048 0.98
0.036 0.96
0.024 0.94
S11
0.61 0.21
0.012 0.92
0.55 0.15
100
S12
200 300
500 700 1000
f, FREQUENCY (MHz)
0.90
Figure 6. Common−Gate S Parameter
Magnitude versus Frequency
q21, q11
180° 50°
170° 40°
160° 30°
150° 20°
140° 10°
130° 0°
100
q12, q22
−2 0° 87°
q22 −20 °
−40 ° 86°
q21 −60 °
−80 ° 85°
−100 °
q12
q11
VDS = 10 V
ID = 10 mA
TA = 25°C
200 300 500 700
f, FREQUENCY (MHz)
−120 °
−140 °
−160 °
−180 °
−200 °
1000
84°
83°
82°
Figure 7. Common−Gate Y Parameter
Phase−Angle versus Frequency
q11, q12
−20 ° 120°
q11
−40 ° 100° q21
−60 ° 80°
q22
q21, q22
0
−20 °
−40 °
−80 ° 60°
q12
−100 ° 40°
−120 ° 20°
100
q21 −60 °
VDS = 10 V
ID = 10 mA
TA = 25°C
q11
200 300 500 700
f, FREQUENCY (MHz)
−80 °
−100 °
1000
Figure 8. S Parameter Phase−Angle
versus Frequency
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J309, J310
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
R
SEATING
PLANE
B
P
L
K
XX
H
V
G
C
1
N
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.021
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 −−−
L 0.250 −−−
N 0.080 0.105
P −−− 0.100
R 0.115 −−−
V 0.135 −−−
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.407 0.533
1.15 1.39
2.42 2.66
0.39 0.50
12.70 −−−
6.35 −−−
2.04 2.66
−−− 2.54
2.93 −−−
3.43 −−−
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
J309/D