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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
JA101
PNP general purpose transistor
Product specification
Supersedes data of 1997 Mar 10
File under Discrete Semiconductors, SC10
1998 Aug 04

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Philips Semiconductors
PNP general purpose transistor
Product specification
JA101
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: JC501.
PINNING
PIN
1
2
3
DESCRIPTION
base
collector
emitter
handbook, halfpage1
2
3
1
MAM285
2
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
open base
Tamb 25 °C
IC = 1 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN.
135
100
MAX.
50
45
200
500
600
UNIT
V
V
mA
mW
MHz
1998 Aug 04
2

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Philips Semiconductors
PNP general purpose transistor
Product specification
JA101
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
50
45
5
100
200
100
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
1998 Aug 04
3

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Philips Semiconductors
PNP general purpose transistor
Product specification
JA101
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
JA101
IE = 0; VCB = 45 V
IE = 0; VCB = 45 V; Tj = 125 °C
IC = 0; VEB = 5 V
IC = 1 mA; VCE = 5 V
135
JA101P
135
JA101Q
200
JA101R
300
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter voltage
IC = 2 mA; VCE = 5 V
550
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 k;
f = 1 kHz; B = 200 Hz
500
700
850
12
130
15
4
100
600
270
400
600
300
700
6
10
nA
µA
nA
mV
mV
mV
mV
mV
pF
pF
MHz
dB
1998 Aug 04
4

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Philips Semiconductors
PNP general purpose transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
Product specification
JA101
SOT54
c
E
d
1
2
D
3
b1
AL
L1
b
e1
e
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A b b1 c D d E e e1 L L1(1)
mm
5.2
5.0
0.48 0.66 0.45
0.40 0.56 0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
SOT54
TO-92
SC-43
ISSUE DATE
97-02-28
1998 Aug 04
5