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SG2000 SERIES
HIGH VOLTAGE MEDIUM
CURRENT DRIVER ARRAYS
DESCRIPTION
The SG2000 series integrates seven NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 16 pin dual in line ceramic
(J) package and 20 pin Leadless Chip Carrier (LCC). The plastic
dual in–line (N) is designed to operate over the commercial
temperature range of 0°C to 70°C.
FEATURES
Seven npn Darlington pairs
-55°C to 125°C ambient operating temperature range
Collector currents to 600mA
Output voltages from 50V to 95V
Internal clamping diodes for inductive loads
DTL, TTL, PMOS, or CMOS compatible inputs
Hermetic ceramic package
HIGH RELIABILITY FEATURES
Available to MIL-STD-883 and DESC SMD
MIL-M38510/14101BEA - JAN2001J
MIL-M38510/14102BEA - JAN2002J
MIL-M38510/14103BEA - JAN2003J
MIL-M38510/14104BEA - JAN2004J
Radiation data available
LMI level "S" processing available
PARTIAL SCHEMATICS
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
1 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570

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SG2000 SERIES
ABSOLUTE MAXIMUM RATINGS (Note 1)
Output Voltage, VCE
(SG2000, 2010 series) ................................................ 50V
(SG2020 series) .......................................................... 95V
Input Voltage, VIN
(SG2002,3,4) ............................................................... 30V
Continuous Input Current, IIN ........................................ 25mA
Note 1. Values beyond which damage may occur.
THERMAL DATA
J Package:
Thermal Resistance-Junction to Case, θJC .................. 30°C/W
Thermal Resistance-Junction to Ambient, θJA ............... 80°C/W
N Package:
Thermal Resistance-Junction to Case, θJC .................. 40°C/W
Thermal Resistance-Junction to Ambient, θJA .............. 65°C/W
L Package:
Thermal Resistance-Junction to Case, θJC .................. 35°C/W
Thermal Resistance-Junction to Ambient, θJA ............ 120°C/W
Peak Collector Current, IC
(SG2000, 2020) ...................................................... 500mA
(SG2010) ................................................................ 600mA
Operating Junction Temperature
Hermetic (J, L Packages) ......................................... 150°C
Plastic (N, Packages) ............................................... 150°C
Storage Temperature Range .......................... -65°C to 150°C
Lead Temperature (Soldering 10 sec.) ......................... 300°C
Note A.
Junction Temperature Calculation:
T
J
=
T
A
+
(P
D
x
θJA).
Note B. The above numbers forθJCare maximums for the limiting thermal
resistance of the package in a standard mounting configuration.
The θJA numbers are meant to be guidelines for the thermal
performance of the device/pc-board system. All of the above
assume no ambient airflow.
RECOMMENDED OPERATING CONDITIONS (Note 2)
Output Voltage, V
CE
SG2000, SG2010 series .............................................. 50V
SG2020 series ............................................................. 95V
Note 2. Range over which the device is functional.
Peak Collector Current, I
C
SG2000, SG2020 series ........................................... 50mA
SG2010 series ........................................................ 500mA
Operating Ambient Temperature Range
SG2000 Series - Hermetic .......................... -55°C to 125°C
SG2000 Series - Plastic .................................. 0°C to 70°C
SELECTION GUIDE
Device V Max I Max
CE C
SG2001 50V 500mA
SG2002
SG2003
SG2004
SG2011
50V
50V
50V
50V
500mA
500mA
500mA
600mA
SG2012 50V 600mA
Logic Inputs
General Purpose
PMOS, CMOS
14V-25V PMOS
5V TTL, CMOS
6V-15V CMOS, PMOS
General Purpose
PMOS, CMOS
14V-25V PMOS
Device
SG2013
SG2014
SG2015
SG2021
V Max
CE
50V
50V
50V
95V
SG2023
SG2024
95V
95V
I Max
C
600mA
600mA
600mA
500mA
500mA
500mA
Logic Inputs
5V TTL, CMOS
6V-15V CMOS, PMOS
High Output TTL
General Purpose
PMOS, CMOS
5V TTL, CMOS
6V-15V CMOS, PMOS
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
2 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570

No Preview Available !

SG2000 SERIES
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over the operating ambient temperatures for SG2000 series - Hermetic - with -55°C TA 125°C
and SG2000 series - Plastic - with 0°CTA 70°C. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal
to the ambient temperature.)
SG2001 thru SG2004
Parameter
Output Leakage Current (ICEX)
Collector - Emitter (VCE(SAT))
Input Current (IIN(ON))
Applicable
Devices
All
SG2002
SG2004
All
SG2002
SG2003
SG2004
Temp.
TA = TMIN
T =T
A MIN
TA = TMIN
TA = 25°C
T = 25°C
A
TA = 25°C
TA = TMAX
T =T
A MAX
TA = TMAX
(I )
IN(OFF)
Input Voltage (VIN(ON))
D-C Forward Current
Transfer Ratio (h )
FE
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
All
SG2002
SG2003
SG2004
SG2001
All
All
All
All
All
T =T
A MAX
TA = TMIN
TA = TMAX
T =T
A MIN
TA = TMIN
TA = TMIN
T =T
A MAX
TA = TMAX
TA = TMAX
T =T
A MIN
TA = TMIN
TA = TMIN
T =T
A MIN
TA = TMAX
TA = TMAX
T =T
A MAX
TA = TMAX
TA = TMIN
T = 25°C
A
TA = 25°C
TA = 25°C
T = 25°C
A
Note 3. These parameters, although guaranteed, are not tested in production.
Test Conditions
VCE = 50V
V = 50V, V = 6V
CE IN
VCE = 50V, VIN = 1V
IC = 350mA, IB = 850µA
I
C
=
200mA,
I
B
=
550µA
IC = 100mA, IB = 350µA
IC = 350mA, IB = 500µA
I
C
=
200mA,
I
B
=
350µA
IC = 100mA, IB = 250µA
IC = 350mA, IB = 500µA
I
C
=
200mA,
I
B
=
350µA
IC = 100mA, IB = 250µA
VIN = 17V
V = 3.85V
IN
VIN = 5V
VIN = 12V
I
C
=
500µA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 300mA
V = 2V, I = 200mA
CE C
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
V = 2V, I = 200mA
CE C
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
V = 2V, I = 125mA
CE C
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
V = 2V, I = 350mA
CE C
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
V = 2V, I = 275mA
CE C
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
V = 2V, I = 350mA
CE C
0.5 EIN to 0.5 EOUT
0.5 E to 0.5 E
IN OUT
VR = 50V
IF = 350mA
Limits
Min. Typ. Max. Units
100 µA
500 µA
500 µA
1.6 1.8 V
1.3 1.5 V
1.1 1.3 V
1.25 1.6 V
1.1 1.3 V
0.9 1.1 V
1.6 1.8 V
1.3 1.5 V
1.1 1.3 V
480 850 1300 µA
650 930 1350 µA
240 350 500 µA
650 1000 1450 µA
25 50
µA
18 V
13 V
3.3 V
3.6 V
3.9 V
2.4 V
2.7 V
3.0 V
6.0 V
8.0 V
10 V
12 V
5.0 V
6.0 V
7.0 V
8.0 V
500
1000
15 25 pF
250 1000 ns
250 1000 ns
50 µA
1.7 2.0 V
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
3 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570

No Preview Available !

ELECTRICAL CHARTACTERISTICS (continued)
SG2011 thru SG2015
Parameter
Applicable
Devices
Temp.
Test Conditions
Output Leakage Current (ICEX)
Collector - Emitter (VCE(SAT))
Input Current (IIN(ON))
(IIN(OFF))
Input Voltage (VIN(ON))
D-C Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (V )
F
All
SG2012
SG2014
All
SG2012
SG2013
SG2014
SG2015
All
SG2012
SG2013
SG2014
SG2015
SG2011
All
All
All
All
All
VCE = 50V
V = 50V, V = 6V
CE IN
VCE = 50V, VIN = 1V
TA = TMIN IC = 500mA, IB = 1100µA
T =T
A MIN
I
C
=
350mA,
I
B
=
850µA
TA = TMIN IC = 200mA, IB = 550µA
TA = 25°C IC = 500mA, IB = 600µA
T = 25°C
A
I
C
=
350mA,
I
B
=
500µA
TA = 25°C IC = 200mA, IB = 350µA
TA = TMAX IC = 500mA, IB = 600µA
T =T
A MAX
I
C
=
350mA,
I
B
=
500µA
TA = TMAX IC = 200mA, IB = 350µA
VIN = 17V
V = 3.85V
IN
VIN = 5V
VIN = 12V
VIN = 3V
TA = TMAX IC = 500µA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 250mA
TA = TMIN VCE = 2V, IC = 300mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 250mA
TA = TMAX VCE = 2V, IC = 300mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 275mA
TA = TMIN VCE = 2V, IC = 350mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 275mA
TA = TMAX VCE = 2V, IC = 350mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 350mA
TA = TMIN VCE = 2V, IC = 500mA
TA = TMAX VCE = 2V, IC = 350mA
TA = TMAX VCE = 2V, IC = 500mA
TA = TMIN VCE = 2V, IC = 500mA
TA = 25°C VCE = 2V, IC = 500mA
TA = 25°C
T = 25°C 0.5 E to 0.5 E
A IN OUT
TA = 25°C 0.5 EIN to 0.5 EOUT
VR = 50V
I = 350mA
F
IF = 500mA
Note 3. These parameters, although guaranteed, are not tested in production.
SG2000 SERIES
Limits
Units
Min. Typ. Max.
100 µA
500 µA
500 µA
1.8 2.1 V
1.6 1.8 V
1.3 1.5 V
1.7 1.9 V
1.25 1.6 V
1.1 1.3 V
1.8 2.1 V
1.6 1.8 V
1.3 1.5 V
480 850 1300 µA
650 930 1350 µA
240 350 500 µA
650 1000 1450 µA
1180 1500 2400 µA
25 50
µA
23.5 V
17 V
3.6 V
3.9 V
6.0 V
2.7 V
3.0 V
3.5 V
10 V
12 V
17 V
7.0 V
8.0 V
9.5 V
3.0 V
3.5 V
2.4 V
2.6 V
450
900
15 25 pF
250 1000 ns
250 1000 ns
50 µA
1.7 2.0 V
2.5 V
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
4 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570

No Preview Available !

ELECTRICAL CHARACTERISTICS (continued)
SG2021 thru SG2024
Parameter
Applicable
Devices
Temp.
Test Conditions
Output Leakage Current (ICEX)
Collector - Emitter (VCE(SAT))
Input Current (IIN(ON))
(IIN(OFF))
Input Voltage (VIN(ON))
D-C Forward Current
Transfer Ratio (hFE)
Input Capacitance (CIN) (Note 3)
Turn-On Delay (TPLH)
Turn-Off Delay (TPHL)
Clamp Diode Leakage Current (IR)
Clamp Diode Forward Voltage (VF)
All
SG2024
All
SG2023
SG2024
All
SG2023
SG2024
SG2021
All
All
All
All
All
TA = TMIN
TA = TMIN
T =T
A MIN
TA = 25°C
TA = 25°C
T = 25°C
A
TA = TMAX
TA = TMAX
T =T
A MAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMIN
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMAX
TA = TMIN
TA = 25°C
TA = 25°C
TA = 25°C
TA = 25°C
VCE = 95V
V = 95V, V = 1V
CE IN
IC = 350mA, IB = 850µA
IC = 200mA, IB = 550µA
I
C
=
100mA,
I
B
=
350µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
I
C
=
100mA,
I
B
=
250µA
IC = 350mA, IB = 500µA
IC = 200mA, IB = 350µA
I
C
=
100mA,
I
B
=
250µA
VIN = 3.85V
VIN = 5V
V = 12V
IN
IC = 500µA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 250mA
VCE = 2V, IC = 300mA
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 125mA
VCE = 2V, IC = 200mA
VCE = 2V, IC = 275mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
VCE = 2V, IC = 350mA
0.5 EIN to 0.5 EOUT
0.5 EIN to 0.5 EOUT
VR = 95V
IF = 350mA
Note 3. These parameters, although guaranteed, are not tested in production.
SG2000 SERIES
Limits
Units
Min. Typ. Max.
100 µA
500 µA
1.6 1.8 V
1.3 1.5 V
1.1 1.3 V
1.25 1.6 V
1.1 1.3 V
0.9 1.1 V
1.6 1.8 V
1.3 1.5 V
1.1 1.3 V
650 930 1350 µA
240 350 500 µA
650 1000 1450 µA
25 50
µA
13 V
3.3 V
3.6 V
3.9 V
2.4 V
2.7 V
3.0 V
6.0 V
8.0 V
10 V
12 V
5.0 V
6.0 V
7.0 V
8.0 V
500
1000
15 25 pF
250 1000 ns
250 1000 ns
50 µA
1.7 2.0 V
4/90 Rev 1.3 6/97
Copyright © 1997
LINFINITY Microelectronics Inc.
5 11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570