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® INA110
Fast-Settling FET-Input
INSTRUMENTATION AMPLIFIER
FEATURES
q LOW BIAS CURRENT: 50pA max
q FAST SETTLING: 4µs to 0.01%
q HIGH CMR: 106dB min; 90dB at 10kHz
q INTERNAL GAINS: 1, 10, 100, 200, 500
q VERY LOW GAIN DRIFT: 10 to 50ppm/°C
q LOW OFFSET DRIFT: 2µV/°C
q LOW COST
q PINOUT SIMILAR TO AD524 AND AD624
APPLICATIONS
q MULTIPLEXED INPUT DATA
ACQUISITION SYSTEM
q FAST DIFFERENTIAL PULSE AMPLIFIER
q HIGH SPEED GAIN BLOCK
q AMPLIFICATION OF HIGH IMPEDANCE
SOURCES
DESCRIPTION
FET
The INA110 is a versatile monolithic FET-input
instrumentation amplifier. Its current-feedback circuit
–In
X 10
1 Input
13 4.44k
topology and laser trimmed input stage provide
12 404
X 100
excellent dynamic performance and accuracy. The (1)
16 201
INA110 settles in 4µs to 0.01%, making it ideal for X 200
high speed or multiplexed-input data acquisition
11 80.2
X 500
systems.
INA110
10k
A1
20k
20k
10k
10
Sense
9
A3 Output
Internal gain-set resistors are provided for gains of 1,
10, 100, 200, and 500V/V. Inputs are protected for
differential and common-mode voltages up to ±VCC.
Its very high input impedance and low input bias
current make the INA110 ideal for applications
requiring input filters or input protection circuitry.
3
RG
2
+In
FET
Input
4
A2
5
10k
87
10k
6
Ref
14 15
The INA110 is available in 16-pin plastic and ceramic
DIPs, and in the SOL-16 surface-mount package.
Military, industrial and commercial temperature range
grades are available.
Input
Offset
Adjust
+VCC
–VCC
Output
Offset
Adjust
NOTE: (1) Connect to RG for desired gain.
International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706
Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©1986 Burr-Brown Corporation
PDS-645E
Printed in U.S.A. September, 1993

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SPECIFICATIONS
ELECTRICAL
At +25°C, ±VCC = 15VDC, and RL = 2k, unless otherwise specified.
PARAMETER
GAIN
Range of Gain
Gain Equation(1)
Gain Error, DC: G = 1
G = 10
G = 100
G = 200
G = 500
Gain Temp. Coefficient: G = 1
G = 10
G = 100
G = 200
G = 500
Nonlinearity, DC: G = 1
G = 10
G = 100
G = 200
G = 500
OUTPUT
Voltage, RL = 2k
Current
Short-Circuit Current
Capacitive Load
INPUT OFFSET VOLTAGE(2)
Initial Offset: G, P
U
CONDITIONS
Over Temperature
Over Temperature
Stability
INA110AG
MIN TYP MAX
1 800
*
0.002 0.04
0.01
0.1
0.02
0.2
0.04
0.4
0.1 1
±3 ±20
±4 ±20
±6 ±40
±10 ±60
±25 ±100
±0.001 ±0.01
±0.002 ±0.01
±0.004 ±0.02
±0.006 ±0.02
±0.01 ±0.04
±10 ±12.7
±5 ±25
±25
5000
±(100 + ±(500 +
1000/G) 5000/G)
vs Temperature
vs Supply
VCC = ±6V to ±18V
BIAS CURRENT
Initial Bias Current
Initial Offset Current
Impedance: Differential
Common-Mode
VOLTAGE RANGE
Range, Linear Response
CMR with 1kSource Imbalance:
G=1
G = 10
G = 100
G = 200
G = 500
INPUT NOISE(4)
Voltage, fO = 10kHz
fB = 0.1Hz to 10Hz
Current, fO = 10kHz
OUTPUT NOISE(4)
Voltage, fO = 10kHz
fB = 0.1Hz to 10Hz
DYNAMIC RESPONSE
Small Signal: G = 1
G = 10
G = 100
G = 200
G = 500
Full Power
Slew Rate
Settling Time:
0.1%, G = 1
G = 10
G = 100
G = 200
G = 500
Each Input
VIN Diff. = 0V(3)
DC
DC
DC
DC
DC
–3dB
VOUT = ±10V,
G = 2 to 100
G = 2 to 100
VO = 20V Step
±(2 +
20/G)
±(4 +
60/G)
±(5 +
100/G)
±(30 +
300/G)
20
2
5x1012||6
2x1012||1
100
50
±10 ±12
70 90
87 104
100 110
100 110
100 110
10
1
1.8
65
8
2.5
2.5
470
240
100
190 270
12 17
4
2
3
5
11
INA110BG, SG
MIN TYP MAX
**
G = 1 + [40k/(RG + 50)]
* 0.02
0.005 0.05
0.01
0.1
0.02
0.2
0.05
0.5
* ±10
±2 ±10
±3 ±20
±5 ±30
±10 ±50
±0.0005 ±0.005
±0.001 ±0.005
±0.002 ±0.01
±0.003 ±0.01
±0.005 ±0.02
**
**
*
*
±(50 + ±(250 +
600/G) 3000/G)
±(1 +
10/G)
±(2 +
30/G)
±(2 +
50/G)
±(10 +
180/G)
10 50
1 25
*
*
80 100
96 112
106 116
106 116
106 116
*
*
*
*
*
*
*
*
*
*
**
**
*
*
*
*
*
INA110KP, KU
MIN TYP MAX
UNITS
* * V/V
* V/V
**%
**%
**%
**%
**%
* ppm/°C
* ppm/°C
* ppm/°C
* ppm/°C
* ppm/°C
* * % of FS
* * % of FS
* * % of FS
* * % of FS
* * % of FS
**
**
*
*
V
mA
mA
pF
* * µV
±(200 + ±(1000 +
2000/G) 5000/G)
*
µV
µV/°C
* * µV/V
* * pA
* * pA
* || pF
* || pF
**
**
**
**
**
**
V
dB
dB
dB
dB
dB
* nV/Hz
* µVp-p
* fA/Hz
* nV/Hz
* µVp-p
* MHz
* MHz
* kHz
* kHz
* kHz
* * kHz
* * V/µs
* µs
* µs
* µs
* µs
* µs
®
INA110
2

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SPECIFICATIONS (CONT)
ELECTRICAL
At +25°C, ±VCC 15VDC, and RL = 2K, unless otherwise specified.
INA110AG
PARAMETER
DYNAMIC RESPONSE (CONT)
Settling Time:
0.01%,G = 1
G = 10
G = 100
G = 200
G = 500
Recovery(5)
POWER SUPPLY
Rated Voltage
Voltage Range
Quiescent Current
TEMPERATURE RANGE
Specification: A, B, K
S
Operation
Storage
θJA
CONDITIONS
MIN TYP MAX
VO = 20V Step
50% Overdrive
VO = 0V
5 12.5
3 7.5
4 7.5
7 12.5
16 25
1
±15
±6 ±18
±3 ±4.5
–25 +85
–55 +125
–65 +150
100
INA110BG, SG
MIN TYP MAX
**
**
**
**
**
*
*
**
**
**
–55 +125
**
**
*
INA110KP, KU
MIN TYP MAX
UNITS
* µs
* µs
* µs
* µs
* µs
* µs
*V
* *V
* * mA
0 +70 °C
°C
–25 +85 °C
–40 +85 °C
* °C/W
* Same as INA110AG.
NOTES: (1) Gains other than 1, 10, 100, 200, and 500 can be set by adding an external resistor, RG, between pin 3 and pins 11, 12 and 16. Gain accuracy is a function
of RG and the internal resistors which have a ±20% tolerance with 20ppm/°C drift. (2) Adjustable to zero. (3) For differential input voltage other than zero, see Typical
Performance Curves. (4) VNOISE RTI = VN2 INPUT + (VN OUTPUT/Gain)2. (5) Time required for output to return from saturation to linear operation following the removal of
an input overdrive voltage.
PIN CONFIGURATION
Top View
–In 1
+In 2
RG
Input Offset Adj.
3
4
Input Offset Adj. 5
Reference 6
–VCC
+VCC
7
8
DIP/SOIC
16 x200
15 Output Offset Adj.
14 Output Offset Adj.
13 x10
12 x100
11 x500
10 Output Sense
9 Output
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
Supply Voltage .................................................................................. ±18V
Input Voltage Range .......................................................................... ±VCC
Operating Temperature Range: G ................................. –55°C to +125°C
P, U ............................... –25°C to +85°C
Storage Temperature Range: G .................................... –65°C to +150°C
P, U .................................. –40°C to +85°C
Lead Temperature (soldering, 10s): G, P ..................................... +300°C
(soldering, 3s): U ........................................... +260°C
Output Short Circuit Duration ............................... Continuous to Common
PACKAGE INFORMATION
MODEL
PACKAGE
PACKAGE DRAWING
NUMBER(1)
INA110AG
INA110BG
INA110SG
INA110KP
INA110KU
16-Pin Ceramic DIP
16-Pin Ceramic DIP
16-Pin Ceramic DIP
16-Pin Plastic DIP
SOL-16 SOIC
109
109
109
180
211
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
MODEL
INA110AG
INA110BG
INA110SG
INA110KP
INA110KU
PACKAGE
16-Pin Ceramic DIP
16-Pin Ceramic DIP
16-Pin Ceramic DIP
16-Pin Plastic DIP
SOL-16 SOIC
TEMPERATURE RANGE
–25°C to +85°C
–25°C to +85°C
–55°C to +125°C
0°C to +70°C
0°C to +70°C
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN
assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject
to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not
authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
®
3 INA110

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DICE INFORMATION
15 14 13
16
1
12
2
3A 3B 4 5
INA110 DIE TOPOGRAPHY
11 10
9
8
7
6
7
PAD
FUNCTION
1
2
3A,3B
4
5
6
7
8
9
10
11
12
13
14
15
16
–In
+In
RG (connect both)
Input Offset Adjust
Input Offset Adjust
Reference
–VCC
+VCC
Output
Output Sense
x500
x100
x10
Output Offset Adjust
Output Offset Adjust
x200
Pads 3A and 3B must be connected.
Substrate Bias: Internally connected to –VCC power sup-
ply.
MECHANICAL INFORMATION
Die Size
Die Thickness
Min. Pad Size
Backing
MILS (0.001")
139 x 89 ±5
20 ±3
4x4
MILLIMETERS
3.53 x 2.26 ±0.13
0.51 ±0.08
0.10 x 0.10
Gold
TYPICAL PERFORMANCE CURVES
At TA = +25°C, and ±VCC = 15VDC, unless otherwise noted.
INPUT VOLTAGE RANGE vs SUPPLY
±15
±16
±12 ±13
±9 ±10
±6
±3
±6
±9 ±12 ±15
Power Supply Voltage (V)
±18
±7
±4
±6
OUTPUT SWING vs LOAD RESISTANCE
±16
±12
±8
±4
0
0 400 800 1.2k 1.6k
Load Resistance ()
®
INA110
2M
4
25
20
15
10
5
0
±6
OUTPUT SWING vs SUPPLY
RL = 2k
±9 ±12 ±15
Power Supply Voltage (V)
±18
BIAS CURRENT vs SUPPLY
±9 ±12 ±15
Power Supply Voltage (V)
±18

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TYPICAL PERFORMANCE CURVES (CONT)
TA = +25°C, ±VCC = 15VDC, unless otherwise noted.
100nA
BIAS CURRENT vs TEMPERATURE
10nA
1pA
100pA
10pA
1pA
–55
–25
5 35 65
Temperature (°C)
95
125
GAIN vs FREQUENCY
1k
G = 500
G = 200
100 G = 100
G = 10
10
1 G=1
10 100 1k 10k 100k 1M 10M
Frequency (Hz)
120
100
80
60
40
20
0
1
CMR vs FREQUENCY
G = 500
G = 200
G = 100
G = 10
G=1
10 100 1k 10k 100k 1M
Frequency (Hz)
LARGE SIGNAL TRANSIENT RESPONSE
(G = 100)
10
0
–10
0 10 20
Time (µs)
120
100
80
60
40
20
0
1
POWER SUPPLY REJECTION vs FREQUENCY
G = 500
G = 200
G = 100
G = 10
G=1
10 100 1k 10k 100k 1M
Frequency (Hz)
SMALL SIGNAL TRANSIENT RESPONSE
(G = 100)
100
0
–100
0 10 20
Time (µs)
®
5 INA110