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®
INA128
INA129
INA128
INA129
INA128
INA129
Precision, Low Power
INSTRUMENTATION AMPLIFIERS
FEATURES
q LOW OFFSET VOLTAGE: 50µV max
q LOW DRIFT: 0.5µV/°C max
q LOW INPUT BIAS CURRENT: 5nA max
q HIGH CMR: 120dB min
q INPUTS PROTECTED TO ±40V
q WIDE SUPPLY RANGE: ±2.25 to ±18V
q LOW QUIESCENT CURRENT: 700µA
q 8-PIN PLASTIC DIP, SO-8
APPLICATIONS
q BRIDGE AMPLIFIER
q THERMOCOUPLE AMPLIFIER
q RTD SENSOR AMPLIFIER
q MEDICAL INSTRUMENTATION
q DATA ACQUISITION
DESCRIPTION
The INA128 and INA129 are low power, general
purpose instrumentation amplifiers offering excellent
accuracy. Their versatile 3-op amp design and small
size make them ideal for a wide range of applications.
Current-feedback input circuitry provides wide band-
width even at high gain (200kHz at G = 100).
A single external resistor sets any gain from 1 to
10,000. INA128 provides an industry standard gain
equation; INA129’s gain equation is compatible with
the AD620.
The INA128/INA129 is laser trimmed for very low
offset voltage (50µV), drift (0.5µV/°C) and high com-
mon-mode rejection (120dB at G 100). It operates
with power supplies as low as ±2.25V, and quiescent
current is only 700µA—ideal for battery operated
systems. Internal input protection can withstand up to
±40V without damage.
The INA128/INA129 is available in 8-pin plastic
DIP, and SO-8 surface-mount packages, specified for
the –40°C to +85°C temperature range. The INA128
is also available in dual configuration, the INA2128.
2 Over-Voltage
VIN Protection
1
RG
8
+ 3 Over-Voltage
VIN Protection
A1
25k(1)
25k(1)
A2
V+
7
40k
INA128, INA129
40k
A3
6
INA128:
G = 1 + 50k
RG
INA129:
G = 1 + 49.4k
RG
VO
40k
40k
5
Ref
NOTE: (1) INA129: 24.7k
4
V–
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©1995 Burr-Brown Corporation
PDS-1296C
Printed in U.S.A. October, 1996

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SPECIFICATIONS
At TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted.
INA128P, U
INA129P, U
PARAMETER
CONDITIONS
INPUT
Offset Voltage, RTI
Initial
vs Temperature
vs Power Supply
Long-Term Stability
TA = +25°C
TA = TMIN to TMAX
VS = ±2.25V to ±18V
Impedance, Differential
Common-Mode
Common-Mode Voltage Range(1)
VO = 0V
Safe Input Voltage
Common-Mode Rejection
VCM = ±13V, RS = 1k
G=1
G=10
G=100
G=1000
BIAS CURRENT
vs Temperature
Offset Current
vs Temperature
NOISE VOLTAGE, RTI
f = 10Hz
f = 100Hz
f = 1kHz
fB = 0.1Hz to 10Hz
Noise Current
f=10Hz
f=1kHz
fB = 0.1Hz to 10Hz
GAIN
Gain Equation, INA128
INA129
Range of Gain
Gain Error
Gain vs Temperature(2)
50k(or 49.4k) Resistance(2, 3)
Nonlinearity
G = 1000, RS = 0
G=1
G=10
G=100
G=1000
G=1
VO = ±13.6V, G=1
G=10
G=100
G=1000
OUTPUT
Voltage: Positive
Negative
Load Capacitance Stability
Short-Circuit Current
RL = 10k
RL = 10k
FREQUENCY RESPONSE
Bandwidth, –3dB
Slew Rate
Settling Time, 0.01%
Overload Recovery
G=1
G=10
G=100
G=1000
VO = ±10V, G=10
G=1
G=10
G=100
G=1000
50% Overdrive
POWER SUPPLY
Voltage Range
Current, Total
TEMPERATURE RANGE
Specification
Operating
θJA 8-Pin Dip
SO-8 SOIC
VIN = 0V
MIN TYP MAX
(V+) – 2
(V–) + 2
80
100
120
120
±10 ±100/G
±0.2 ± 2/G
±0.2 ±20/G
±0.1 ±3/G
1010 || 2
1011 || 9
(V+) – 1.4
(V–) + 1.7
±50 ±500/G
±0.5 ± 20/G
±1 ±100/G
±40
86
106
125
130
±2 ±5
±30
±1 ±5
±30
10
8
8
0.2
0.9
0.3
30
1 + (50k/RG)
1 + (49.4k/RG)
1 10000
±0.01
±0.024
±0.02
±0.4
±0.05
±0.5
±0.5 ±1
±1 ±10
±25 ±100
±0.0001
±0.001
±0.0003
±0.002
±0.0005
±0.002
±0.001
(Note 4)
(V+) – 1.4
(V–) + 1.4
(V+) – 0.9
(V–) + 0.8
1000
+6/–15
±2.25
–40
–40
1.3
700
200
20
4
7
7
9
80
4
±15
±700
80
150
±18
±750
85
125
INA128PA, UA
INA129PA, UA
MIN TYP MAX
UNITS
±25 ±100/G ±125 ±1000/G
µV
±0.2 ± 5/G ±1 ± 20/G
µV/°C
T
±2 ±200/G
µV/V
T µV/mo
T || pF
T || pF
TT
V
TT
V
TV
73 T
93 T
110 T
110 T
T
T
T
T
dB
dB
dB
dB
±10 nA
pA/°C
±10 nA
pA/°C
T nV/Hz
T nV/Hz
T nV/Hz
T µVp-p
T pA/Hz
T pA/Hz
T pAp-p
T V/V
T V/V
T T V/V
T ±0.1 %
T ±0.5 %
T ±0.7 %
T ±2 %
T T ppm/°C
T T ppm/°C
T
±0.002
% of FSR
T
±0.004
% of FSR
T
±0.004
% of FSR
T T % of FSR
TT
TT
T
T
V
V
pF
mA
T
T
T
T
T
T
T
T
T
T
TT
T
T
T
T
T
MHz
kHz
kHz
kHz
V/µs
µs
µs
µs
µs
µs
TV
T µA
T °C
T °C
°C/W
°C/W
T Specification same as INA128P, U or INA129P, U.
NOTE: (1) Input common-mode range varies with output voltage—see typical curves. (2) Guaranteed by wafer test. (3) Temperature coefficient of the 50k(or 49.4k)
term in the gain equation. (4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.

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PIN CONFIGURATION
8-Pin DIP and SO-8
RG 1
V–IN 2
V+IN 3
V– 4
Top View
8 RG
7 V+
6 VO
5 Ref
ABSOLUTE MAXIMUM RATINGS
Supply Voltage .................................................................................. ±18V
Analog Input Voltage Range ............................................................. ±40V
Output Short-Circuit (to ground) .............................................. Continuous
Operating Temperature ................................................. –40°C to +125°C
Storage Temperature ..................................................... –40°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
ORDERING INFORMATION
PRODUCT
INA128PA
INA128P
INA128UA
INA128U
INA129PA
INA129P
INA129UA
INA129U
PACKAGE
8-Pin Plastic DIP
8-Pin Plastic DIP
SO-8 Surface-Mount
SO-8 Surface-Mount
8-Pin Plastic DIP
8-Pin Plastic DIP
SO-8 Surface-Mount
SO-8 Surface-Mount
PACKAGE
DRAWING
NUMBER(1)
006
006
182
182
006
006
182
182
TEMPERATURE
RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility
for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or
licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support
devices and/or systems.

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TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = ±15V, unless otherwise noted.
60
G = 1000V/V
50
GAIN vs FREQUENCY
40
G = 100V/V
30
20
G = 10V/V
10
0
G = 1V/V
–10
–20
1k
10k 100k 1M
Frequency (Hz)
10M
COMMON-MODE REJECTION vs FREQUENCY
140 G = 1000V/V
G = 100V/V
120
G = 10V/V
100
G = 1V/V
80
60
40
20
0
10
100
1k
10k 100k
1M
Frequency (Hz)
140
120
100
80
60
40
20
0
10
POSITIVE POWER SUPPLY REJECTION
vs FREQUENCY
G = 1000V/V
G = 100V/V
G = 10V/V
G = 1V/V
100 1k 10k 100k 1M
Frequency (Hz)
140
120
100
80
60
40
20
0
10
NEGATIVE POWER SUPPLY REJECTION
vs FREQUENCY
G = 1000V/V
G = 100V/V
G = 10V/V
G = 1V/V
100 1k 10k 100k 1M
Frequency (Hz)
INPUT COMMON-MODE RANGE
vs OUTPUT VOLTAGE, VS = ±15V
15
G 10
G 10
10
G=1
G=1
5
+15V
0
VD/2
+
VO
–5
VD/2
++
VCM
–15V
Ref
–10
–15
–15
–10
–5
0
5 10 15
Output Voltage (V)
5
4
3
2
1
0
–1
–2
–3
–4
–5
–5
INPUT COMMON-MODE RANGE
vs OUTPUT VOLTAGE, VS = ±5, ±2.5V
G 10
G 10
G=1
G 10
G=1
G=1
VS = ±5V
VS = ±2.5V
–4 –3 –2 –1 0 1 2
Output Voltage (V)
34
5

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TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, VS = ±15V, unless otherwise noted.
INPUT- REFERRED NOISE vs FREQUENCY
1k
100
G = 1V/V
100 10
10
1
1
G = 10V/V
G = 100, 1000V/V
1
Current Noise
10 100 1k
Frequency (Hz)
0.1
10k
100
10
1
1
SETTLING TIME vs GAIN
0.01%
0.1%
10 100
Gain (V/V)
1000
0.85
QUIESCENT CURRENT and SLEW RATE
vs TEMPERATURE
6
0.8 5
0.75
0.7
Slew Rate
4
3
0.65
IQ
2
0.6
–75 –50 –25
0 25 50
Temperature (°C)
1
75 100 125
INPUT OVER-VOLTAGE V/I CHARACTERISTICS
5
4
3 Flat region represents
2 normal linear operation.
1
0
G = 1000V/V
G = 1V/V
–1 G = 1V/V
–2
+15V
–3
–4 G = 1000V/V
–5
VIN
IIN –15V
–50 –40 –30 –20 –10 0 10 20 30 40 50
Input Voltage (V)
10
8
6
4
2
0
–2
–4
–6
–8
–10
0
INPUT OFFSET VOLTAGE WARM-UP
100 200 300 400 500
Time (µs)
INPUT BIAS CURRENT vs TEMPERATURE
2
1
IOS
0
–1
–2
–75
Typical IB and IOS
Range ±2nA at 25°C
IB
–50 –25
0 25 50
Temperature (°C)
75
100 125