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INA163
SBOS177B – NOVEMBER 2000 – REVISED NOVEMBER 2004
Low-Noise, Low-Distortion
INSTRUMENTATION AMPLIFIER
FEATURES
q LOW NOISE: 1nV/Hz at 1kHz
q LOW THD+N: 0.002% at 1kHz, G = 100
q WIDE BANDWIDTH: 800kHz at G = 100
q WIDE SUPPLY RANGE: ±4.5V to ±18V
q HIGH CMR: > 100dB
q GAIN SET WITH EXTERNAL RESISTOR
q SO-14 SURFACE-MOUNT PACKAGE
APPLICATIONS
q PROFESSIONAL MICROPHONE PREAMPS
q MOVING-COIL TRANSDUCER AMPLIFIERS
q DIFFERENTIAL RECEIVERS
q BRIDGE TRANSDUCER AMPLIFIERS
DESCRIPTION
The INA163 is a very low-noise, low-distortion, mon-
olithic instrumentation amplifier. Its current-feedback
circuitry achieves very wide bandwidth and excellent
dynamic response over a wide range of gain. It is ideal
for low-level audio signals such as balanced low-
impedance microphones. Many industrial, instrumen-
tation, and medical applications also benefit from its
low noise and wide bandwidth.
Unique distortion cancellation circuitry reduces distor-
tion to extremely low levels, even in high gain. The
INA163 provides near-theoretical noise performance
for 200source impedance. Its differential input, low
noise, and low distortion provide superior performance
in professional microphone amplifier applications.
The INA163’s wide supply voltage, excellent output
voltage swing, and high output current drive allow its
use in high-level audio stages as well.
The INA163 is available in a space-saving SO-14
surface-mount package, specified for operation over
the –40°C to +85°C temperature range.
VIN
4
3
VO1
1
A1
3k
6k
INA163
6kSense
8
RG
12
VIN+
5
3k
A2
6k
A3
6k
9 VO
6000
G=1+
RG
Ref
10
14 11 6
VO2 V+ V-
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright © 2000–2004, Texas Instruments Incorporated

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PIN CONFIGURATION
Top View
ELECTROSTATIC
DISCHARGE SENSITIVITY
VO1 1
NC 2
GS1 3
VIN- 4
VIN+ 5
V- 6
NC 7
14 VO2
13 NC
12 GS2
11 V+
10 Ref
9 VO
8 Sense
NC = No Internal Connection
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to ob-
serve proper handling and installation procedures can
cause damage.
ESD damage can range from subtle performance deg-
radation to complete device failure. Precision integrated
circuits may be more susceptible to damage because
very small parametric changes could cause the device
not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS(1)
Power Supply Voltage ....................................................................... ±18V
Signal Input Terminals, Voltage(2) .................. (V–) – 0.5V to (V+) + 0.5V
Current(2) .................................................... 10mA
Output Short-Circuit to Ground ............................................... Continuous
Operating Temperature .................................................. –55°C to +125°C
Storage Temperature ..................................................... –55°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
PACKAGE/ORDERING INFORMATION(1)
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals
that can swing more than 0.5V beyond the supply rails should be current
limited to 10mA or less.
PRODUCT
INA163UA
"
PACKAGE-LEAD
SO-14 Surface Mount
"
PACKAGE
DESIGNATOR
D
"
PACKAGE
MARKING
INA163UA
"
ORDERING
NUMBER(2)
INA163
INA163UA/2K5
TRANSPORT
MEDIA
Rails
Tape and Reel
NOTES: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet. (2) Models with a
slash (/) are available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces of “INA163UA/2K5” will
get a single 2500-piece Tape and Reel.
INA163
2 SBOS177B
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ELECTRICAL CHARACTERISTICS: VS = ±15V
TA = +25°C and at rated supplies, VS = ±15V, RL = 2kconnected to ground, unless otherwise noted.
PARAMETER
GAIN
Range
Gain Equation(1)
Gain Error, G = 1
G = 10
G = 100
G = 1000
Gain Temp Drift Coefficient, G = 1
G > 10
Nonlinearity, G = 1
G = 100
INPUT STAGE NOISE
Voltage Noise
fO = 1kHz
fO = 100Hz
fO = 10Hz
Current Noise
fO = 1kHz
OUTPUT STAGE NOISE
Voltage Noise, fO = 1kHz
INPUT OFFSET VOLTAGE
Input Offset Voltage
vs Temperature
vs Power Supply
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
Common-Mode Rejection, G = 1
G = 100
INPUT BIAS CURRENT
Initial Bias Current
vs Temperature
Initial Offset Current
vs Temperature
INPUT IMPEDANCE
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3dB, G = 1
G = 100
Slew Rate
THD+Noise, f = 1kHz
Settling Time, 0.1%
0.01%
Overload Recovery
OUTPUT
Voltage
CONDITIONS
RSOURCE = 0
VCM = VOUT = 0V
TA = TMIN to TMAX
VS = ±4.5V to ±18V
VIN+ – VIN– = 0V
VIN+ – VIN– = 0V
VCM = ±11V, RSRC = 0
Differential
Common-Mode
G = 100
G = 100, 10V Step
G = 100, 10V Step
50% Overdrive
RL = 2kto Gnd
Load Capacitance Stability
Short-Circuit Current
POWER SUPPLY
Rated Voltage
Voltage Range
Current, Quiescent
TEMPERATURE RANGE
Specification
Operating
θJA
NOTE: (1) Gain accuracy is a function of external RG.
Continuous-to-Common
IO = 0mA
INA163UA
MIN TYP
1 to 10000
G = 1 + 6k/RG
±0.1
±0.2
±0.2
±0.5
±1
±25
±0.0003
±0.0006
(V+) – 4
(V–) + 4
70
100
(V+) – 2
(V–) + 2
±4.5
–40
–40
1
1.2
2
0.8
60
50 + 2000/G
1 + 20/G
1 + 50/G
(V+) – 3
(V–) + 3
80
116
2
10
0.1
0.5
60 2
60 2
3.4
800
15
0.002
2
3.5
1
(V+) – 1.8
(V–) + 1.8
1000
±60
±15
±10
100
MAX
±0.25
±0.7
±10
±100
250 + 5000/G
3 + 200/G
12
1
±18
±12
+85
+125
UNITS
V/V
%
%
%
%
ppm/°C
ppm/°C
% of FS
% of FS
nV/Hz
nV/Hz
nV/Hz
pA/Hz
nV/Hz
µV
µV/°C
µV/V
V
V
dB
dB
µA
nA/°C
µA
nA/°C
MΩ  pF
MΩ  pF
kHz
V/µs
%
µs
µs
µs
V
V
pF
mA
V
V
mA
°C
°C
°C/W
INA163
SBOS177B
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3

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TYPICAL CHARACTERISTICS
At TA = +25°C, VS = 5V, VCM = 1/2 VS, RL = 25k, CL = 50pF, unless otherwise noted.
70
60
50
40
30
20
10
0
10
20
10k
GAIN vs FREQUENCY
G = 1000
G = 100
G = 10
G=1
100k
1M
Frequency (Hz)
10M
0.1
VO = 5Vrms
RL = 10k
THD+N vs FREQUENCY
G = 1000
0.01
0.001
G = 100
G = 10
G=1
0.0001
20
100 1k
Frequency (Hz)
10k 20k
NOISE VOLTAGE (RTI) vs FREQUENCY
1k
100
10
1
10
G=1
G = 10
G = 100
G = 500 G = 1000
100 1k
Frequency (Hz)
10k
CURRENT NOISE SPECTRAL DENSITY
10
1
0.1
1 10 100 1k 10k
Frequency (Hz)
COMMON- MODE REJECTION vs FREQUENCY
140
G = 1000
120
100 G = 100
G = 10
80
G=1
60
40
20
0
10
100 1k 10k 100k 1M
Frequency (Hz)
POWER-SUPPLY REJECTION vs FREQUENCY
140
G = 100, 1000
120
G = 10
100
G=1
80
60
40
20
0
1 10 100 1k 10k 100k 1M
Frequency (Hz)
INA163
4 SBOS177B
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TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, VS = 5V, VCM = 1/2VS, RL = 25k, CL = 50pF, unless otherwise noted.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
V+
(V+) 2
(V+) 4
(V+) 6
(V) + 6
(V) + 4
(V) + 2
V
0
10 20 30 40 50 60
Output Current (mA)
SETTLING TIME vs GAIN
10
20V Step
8
0.01%
6
4
2
0.1%
0
1 10 100
Gain
1000
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 1)
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 100)
2.5ms/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 1)
10ms/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 100)
INA163
SBOS177B
2.5ms/div
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2.5ms/div
5