INA170.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 INA170 데이타시트 다운로드

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INA170
SBOS193B – MARCH 2001 – REVISED JUNE 2004
High-Side, Bidirectional
CURRENT SHUNT MONITOR
FEATURES
q COMPLETE BIDIRECTIONAL CURRENT
MEASUREMENT CIRCUIT
q WIDE SUPPLY RANGE: 2.7V to 40V
q SUPPLY-INDEPENDENT COMMON-MODE
VOLTAGE: 2.7V TO 60V
q RESISTOR PROGRAMMABLE GAIN SET
q LOW QUIESCENT CURRENT: 75µA (typ)
q MSOP-8 PACKAGE
APPLICATIONS
q CURRENT SHUNT MEASUREMENT:
Automotive, Telephone, Computers, Power
Systems, Test, General Instrumentation
q PORTABLE AND BATTERY-BACKUP
SYSTEMS
q BATTERY CHARGERS
q POWER MANAGEMENT
q CELL PHONES
DESCRIPTION
The INA170 is a high-side, bidirectional current shunt
monitor featuring a wide input common-mode voltage range,
low quiescent current, and a tiny MSOP-8 package.
Bidirectional current measurement is accomplished by out-
put offsetting. The offset voltage level is set with an external
resistor and voltage reference. This permits measurement of
a bidirectional shunt current while using a single supply for
the INA170.
Input common-mode and power-supply voltages are inde-
pendent. Input voltage can range from +2.7V to +60V on
any supply voltage from +2.7V to +40V. Low 10µA input
bias current adds minimal error to the shunt current.
The INA170 converts a differential input voltage to a
current output. This current develops a voltage across an
external load resistor, setting any gain from 1 to over 100.
The INA170 is available in an MSOP-8 package, and is
specified over the extended industrial temperature range,
–40°C to +85°C with operation from –55°C to +125°C.
VSUPPLY
IS RS
VIN+ 2
VI–N 1
Load
VREF 3
ROS 5
ROS
V+
8
RG1
1k
RG2
1k
A1
Q1
6
OUT
A2 Q2
INA170
GND 4
RL
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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Copyright © 2001-2004, Texas Instruments Incorporated

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PACKAGE/ORDERING INFORMATION
PRODUCT
INA170EA
"
PACKAGE
MSOP-8
"
PACKAGE
DRAWING
NUMBER
DGK
"
SPECIFIED
TEMPERATURE
RANGE
–40°C to +85°C
"
PACKAGE
MARKING
INA170EA
"
ORDERING
NUMBER(1)
INA170EA/250
INA170EA/2K5
TRANSPORT
MEDIA
Tape and Reel
Tape and Reel
NOTE: (1) Models with a slash (/) are available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces
of “INA170NA/2K5” will get a single 2500-piece Tape and Reel.
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage, V+ to GND ................................................. –0.3V to 40V
Analog Inputs, Common Mode ............................................ –0.3V to 75V
Differential (VI+N) – (VI–N) .................................. –40V to 2V
Analog Output, Out .............................................................. –0.3V to 40V
Operating Temperature .................................................. –55°C to +125°C
Storage Temperature ..................................................... –65°C to +150°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
2 INA170
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SBOS193B

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ELECTRICAL CHARACTERISTICS
At TA = –40°C to +85°C, VS = 5V, VI+N = 12V, ROUT = 25k, unless otherwise noted.
PARAMETER
CONDITION
INPUT
Full-Scale Sense (Input) Voltage
Common-Mode Input Range
Common-Mode Rejection
Offset Voltage(1) RTI
vs Temperature
vs Power Supply
Input Bias Current
OFFSETTING AMPLIFIER
Offsetting Equation
Input Voltage
Input Offset Voltage
vs Temperature
Programming Current through ROS
Input Impedance
Input Bias Current
OUTPUT
Transconductance
vs Temperature
Nonlinearity Error
Total Output Error
Output Impedance
Voltage Output
Swing to Power Supply, V+
Swing to Common Mode, VCM
FREQUENCY RESPONSE
Bandwidth
Settling Time (0.1%)
NOISE
Output-Current Noise Density
Total Output-Current Noise
VSENSE = VI+N – VI–N
VI+N = +2.7V to +60V, VSENSE = 50mV
TMIN to TMAX
V+ = +2.7V to +60V, VSENSE = 50mV
VI+N, VI–N
VOS = (RL/ROS) VREF
TMIN to TMAX
VI+N, VI–N
VSENSE = 10mV to 150mV
VSENSE = 100mV
VSENSE = 10mV to 150mV
VSENSE = 100mV
ROUT = 10k
5V Step, ROUT = 10k
BW = 100kHz
POWER SUPPLY
Operating Range
Quiescent Current
TEMPERATURE RANGE
Specification, TMIN to TMAX
Operating
Storage
Thermal Resistance, θJA
V+
VSENSE = 0, IO = 0
NOTE: (1) Defined as the amount of input voltage, VSENSE, to drive the output to zero.
MIN
+2.7
100
1
0
0.990
+2.7
–40
–55
–65
INA170EA
TYP
100
120
±0.2
1
0.1
10
MAX
500
+60
±1
10
UNITS
mV
V
dB
mV
µV/°C
µV/V
uA
±0.2
10
1010 || 4
+10
1
50
±0.01
±0.5
1 || 5
(V+) – 0.9
VCM – 0.6
400
3
20
7
75
150
VS – 1
±1
1
V
mV
µV/°C
mA
|| pF
nA
1.01
±0.1
±2
(V+) – 1.2
VCM – 1.0
mA/V
nA/°C
%
%
G|| pF
V
V
kHz
µs
pA/Hz
nA RMS
+40 V
125 µA
+85
+125
+150
°C
°C
°C
°C/W
PIN CONFIGURATION
TOP VIEW
VI–N 1
VI+N 2
VREF 3
GND 4
8 V+
7 NC
6 OUT
5 ROS
MSOP
PIN DESCRIPTION
PIN DESIGNATOR DESCRIPTION
1 VI–N Inverting Input
2 VI+N Noninverting Input
3
VREF
Reference Voltage Input
4
GND
Ground
5 ROS Offset Resistor
6
OUT
Output
7 NC No Connection
8 V+ Supply Voltage
INA170
SBOS193B
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3

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TYPICAL CHARACTERISTICS
At TA = +25°C, V+ = 5V, VI+N = 12V, RL = 25k, unless otherwise noted.
GAIN vs FREQUENCY
40
RL = 100k
30
RL = 10k
20
10
RL = 1k
0
–10
–20
100
1k 10k 100k 1M
Frequency (Hz)
10M
COMMON-MODE REJECTION vs FREQUENCY
120
100 G = 100
80
G = 10
60
G=1
40
20
0
0.1
1
10 100 1k
Frequency (Hz)
10k 100k
POWER-SUPPLY REJECTION vs FREQUENCY
140
120
G = 100
100
G = 10
80
G=1
60
40
20
1
10 100 1k
Frequency (Hz)
10k 100k
TOTAL OUTPUT ERROR
vs POWER-SUPPLY VOLTAGE
2
Output error is essentially
independent of both
1 V+ supply voltage and
input common-mode voltage.
0 G=1
G = 10
–1 G = 25
–2
0
10 20 30
Power-Supply Voltage (V)
40
TOTAL OUTPUT ERROR vs VIN
5
–55°C
VIN = (VI+N – VI–N)
0
–5 +150°C
+25°C
–10
–15
0
25 50 75 100 125 150 200
VIN (mV)
100
80
60
40
20
0
0
QUIESCENT CURRENT
vs POWER-SUPPLY VOLTAGE
+150°
+125°
+25°
–55°
10 20 30
Power-Supply Voltage (V)
40
4 INA170
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SBOS193B

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TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, V+ = 5V, VI+N = 12V, RL = 25k, unless otherwise noted.
1.5V
G = 100
0.5V
1V
G = 100
0V
STEP RESPONSE
20µs/div
1V
G = 50
0V
2V
G = 10
0V
STEP RESPONSE
10µs/div
INA170
SBOS193B
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5