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K4S56163PF - R(B)G/F
Mobile-SDRAM
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
FEATURES
• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system
clock.
• Burst read single-bit write operation.
• Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).
GENERAL DESCRIPTION
The K4S56163PF is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
ORDERING INFORMATION
Part No.
K4S56163PF-R(B)G/F75
Max Freq.
133MHz(CL3), 83MHz(CL2)
K4S56163PF-R(B)G/F90
111MHz(CL3), 83MHz(CL2)
K4S56163PF-R(B)G/F1L
111MHz(CL3)*1, 66MHz(CL2)
- R(B)G : Low Power, Extended Temperature(-25°C ~ 85°C)
- R(B)F : Low Power, Commercial Temperature(-25°C ~ 70°C)
Interface
LVCMOS
Package
54 FBGA Pb
(Pb Free)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Address configuration
Organization
16M x 16
Bank
BA0, BA1
Row
A0 - A12
Column Address
A0 - A8
1 September 2004

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K4S56163PF - R(B)G/F
FUNCTIONAL BLOCK DIAGRAM
Mobile-SDRAM
Bank Select
CLK
ADD
Data Input Register
4M x 16
4M x 16
4M x 16
4M x 16
Column Decoder
LCKE
LRAS
LCBR
LWE
LCAS
Latency & Burst Length
Programming Register
LWCBR
Timing Register
CLK CKE
CS
RAS
CAS
WE L(U)DQM
LWE
LDQM
DQi
LDQM
2 September 2004

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K4S56163PF - R(B)G/F
Mobile-SDRAM
Package Dimension and Pin Configuration
< Bottom View*1 >
< Top View*2 >
E1
987654321
A
B
C
D
E
F
G
H
J
E
E/2
*2: Top View
Substrate(2Layer)
b
*1: Bottom View
z
< Top View*2 >
A
A1
#A1 Ball Origin Indicator
54Ball(6x9) FBGA
123789
A VSS DQ15 VSSQ VDDQ DQ0 VDD
B DQ14 DQ13 VDDQ VSSQ DQ2 DQ1
C DQ12 DQ11 VSSQ VDDQ DQ4 DQ3
D DQ10 DQ9 VDDQ VSSQ DQ6 DQ5
E DQ8 NC VSS VDD LDQM DQ7
F UDQM CLK CKE CAS RAS WE
G A12 A11 A9 BA0 BA1 CS
H A8 A7 A6 A0 A1 A10
J VSS A5 A4 A3 A2 VDD
Pin Name
CLK
CS
CKE
A0 ~ A12
BA0 ~ BA1
RAS
CAS
WE
L(U)DQM
DQ0 ~ 15
VDD/VSS
VDDQ/VSSQ
Pin Function
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
Symbol
A
A1
E
E1
D
D1
e
b
z
Min
1.00
0.27
-
-
-
-
-
0.45
-
[Unit:mm]
Typ Max
1.10 1.20
0.32 0.37
8.0 -
6.40 -
11.0 -
6.40 -
0.80 -
0.50 0.55
- 0.10
3 September 2004

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K4S56163PF - R(B)G/F
Mobile-SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 2.6
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 2.6
Storage temperature
TSTG
-55 ~ +150
Power dissipation
PD 1.0
Short circuit current
IOS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
50
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
Parameter
Symbol
Min
Typ
Max Unit
Note
Supply voltage
VDD
VDDQ
1.7
1.7
1.8 1.95
1.8 1.95
V
V
Input logic high voltage
VIH 0.8 x VDDQ 1.8 VDDQ + 0.3
V
1
Input logic low voltage
VIL -0.3 0 0.3 V
2
Output logic high voltage
VOH
VDDQ -0.2
-
-
V IOH = -0.1mA
Output logic low voltage
VOL -
- 0.2 V IOL = 0.1mA
Input leakage current
ILI -2 - 2 uA
3
NOTES :
1. VIH (max) = 2.2V AC.The overshoot voltage duration is 3ns.
2. VIL (min) = -1.0V AC. The undershoot voltage duration is 3ns.
3. Any input 0V VIN VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V VOUT VDDQ.
CAPACITANCE (VDD = 1.8V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)
Pin
Symbol
Min
Clock
CCLK
1.5
RAS, CAS, WE, CS, CKE, DQM
CIN 1.5
Address
CADD
1.5
DQ0 ~ DQ15
COUT
3.0
Max
3.0
3.0
3.0
5.0
Unit
pF
pF
pF
pF
Note
4 September 2004

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K4S56163PF - R(B)G/F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-75 -90 -1L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC tRC(min)
IO = 0 mA
50 45 40 mA 1
Precharge Standby Current in ICC2P CKE VIL(max), tCC = 10ns
power-down mode
ICC2PS CKE & CLK VIL(max), tCC =
Precharge Standby Current
in non power-down mode
ICC2N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
0.3
0.3
10
1
mA
mA
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3P CKE VIL(max), tCC = 10ns
ICC3PS CKE & CLK VIL(max), tCC =
ICC3N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
5
1
20
5
mA
mA
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
75 60 60 mA 1
Refresh Current
ICC5 tARFC tARFC(min)
Internal TCSR
Self Refresh Current
ICC6 CKE 0.2V
Full Array
1/2 of Full Array
1/4 of Full Array
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
85 85 85 mA
Max 40 Max 70/85 °C
200 450
160 300 uA
140 250
2
5 September 2004