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Si7336DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.00325 @ VGS = 10 V
0.0042 @ VGS = 4.5 V
ID (A)
30
27
Qg (Typ)
36
PowerPAK SO-8
FEATURES
D Ultra-Low On-Resistance Using High Density
TrenchFETr Gen II Power MOSFET Technology
D Qg Optimized
D New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
D 100% Rg Tested
APPLICATIONS
D Low-Side DC/DC Conversion
Notebook
Server
Workstation
D Synchronous Rectifier, POL
6.15 mm
D
8D
7D
6D
5
S
1S
5.15 mm
2S
3G
4
Bottom View
Ordering Information: Si7336DP-T1
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Avalanche Current
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 1.0 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
PD
TJ, Tstg
30
"20
30 18
25 15
70
4.5 1.8
50
5.4 1.9
3.4 1.2
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
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Si7336DP
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 25 A
VGS = 4.5 V, ID = 19 A
VDS = 15 V, ID = 25 A
IS = 2.9 A, VGS = 0 V
1.0 3.0 V
"100
1
5
nA
mA
30 A
0.0026
0.0033
110
0.72
0.00325
0.0042
1.1
W
S
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 4.5 V, ID = 20 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 2.9 A, di/dt = 100 A/ms
5600
860 pF
415
36 50
18 nC
10
0.8 1.3 2.0 W
24 35
16 25
90 140 ns
32 50
45 70
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
VGS = 10 thru 4 V
50
40
30
20
10
0
0
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3V
2468
VDS Drain-to-Source Voltage (V)
10
Transfer Characteristics
60
50
40
30
20
10
0
0.0
TC = 125_C
25_C
55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS Gate-to-Source Voltage (V)
4.0
Document Number: 72415
S-41795—Rev. C, 04-Oct-04

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Si7336DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
On-Resistance vs. Drain Current
7000
0.004
0.003
0.002
0.001
VGS = 4.5 V
VGS = 10 V
6000
5000
4000
3000
2000
1000
Crss
Capacitance
Ciss
Coss
0.000
0
10 20 30 40
ID Drain Current (A)
50
0
0 6 12 18 24
VDS Drain-to-Source Voltage (V)
30
Gate Charge
6
5
VDS = 15 V
ID = 20 A
4
3
2
1
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
1.4 ID = 25 A
1.2
1.0
0.8
0
0 5 10 15 20 25 30 35 40 45
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.015
10
TJ = 150_C
0.012
0.009
ID = 25 A
1
TJ = 25_C
0.006
0.003
0.1
0.00
0.2 0.4 0.6 0.8 1.0
VSD Source-to-Drain Voltage (V)
1.2
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
0.000
0
2468
VGS Gate-to-Source Voltage (V)
10
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Si7336DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
0.2
0.0
0.2
ID = 250 mA
160
120
0.4
0.6
0.8
80
40
1.0
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
0
0.001
Single Pulse Power
0.01
0.1
Time (sec)
1
Safe Operating Area, Junction-to-Case
100
Limited by rDS(on)*
10
1 ms
10 ms
10
1
0.1 TC = 25_C
Single Pulse
100 ms
1s
10 s
dc
2
1
Duty Cycle = 0.5
0.01
0.01
0.1
1
10 100
VDS Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
101
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
50_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
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Document Number: 72415
S-41795—Rev. C, 04-Oct-04

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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si7336DP
Vishay Siliconix
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
Single Pulse
0.05 0.02
0.01
104
103
102
101
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72415.
Document Number: 72415
S-41795—Rev. C, 04-Oct-04
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