SBC337.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 SBC337 데이타시트 다운로드

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Semiconductor
Descriptions
High current application
Switching application
SBC337
NPN Silicon Transistor
Features
Suitable for AF-Driver stage and low power output stages
Complementary pair with SBC327
Ordering Information
Type NO.
SBC337
Marking
SBC337
Package Code
TO-92
Outline Dimensions
unit : mm
4.5±0.1
3.45±0.1
2.25±0.1
0.4±0.02
2.06±0.1
1.27 Typ.
2.54 Typ.
123
KST-9022-000
PIN Connections
1. Collector
2. Base
3. Emitter
1

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Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
50
35
5
800
625
150
-55~150
SBC337
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage
Base-Emitter turn on voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
BVCEO
VBE(ON)
VCE(sat)
ICBO
hFE*
fT
Cob
IC=1mA, IE=0
VCE=1V, IC=300mA
IC=500mA, IB=50mA
VCB=25V, IE=0
VCE=1V, IC=100mA
VCB=5V, IC=10mA
VCB=10V, IE=0, f=1MHz
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
Min.
35
-
-
-
100
-
-
Typ.
-
-
-
-
-
100
16
(Ta=25°C)
Max. Unit
-V
1.2 V
700 mV
100 nA
630 -
- MHz
- pF
KST-9022-000
2

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Electrical Characteristic Curves
Fig. 1 PC-Ta
Fig. 2 IC - VBE
SBC337
Fig. 3 IC - VCE
2SC5344SF
Fig. 4 VCE(sat) - IC
Fig. 5 hFE - IC
KST-9022-000
3