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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power)
GaAs Infrared Emitting Diode (950 nm, Enhanced Power)
F 0118G
Vorläufige Daten / Preliminary Data
Wesentliche Merkmale
• Typ. Gesamtleistung: 24 mW @ 100 mA im
TOPLED® Gehäuse
Chipgröße 300 x 300 µm2
Emissionswellenlänge: 950 nm
GaAs-LED mit sehr hohem Wirkungsgrad
Gute Linearität (Ie = f [IF]) bei hohen Strömen
Gleichstrom- oder Impulsbetrieb möglich
Hohe Zuverlässigkeit
Hohe Impulsbelastbarkeit
Anwendungen
IIR-Fernsteuerung von Fernseh-, Rundfunk-
und Videogeräten, Lichtdimmern
Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
Lichtschranken bis 500 kHz
Sensorik
Features
Typ. total radiant power: 24 mW @ 100 mA in
TOPLED® package.
Chip size 300 x 300 µm2
Peak wavelength: 950 nm
Very highly efficient GaAs LED
Good linearity (Ie = f [IF]) at high currents
DC or pulsed operations are possible
High reliability
High pulse handling capability
Applications
IR remote control for hifi and TV sets, video
tape recorder, dimmers
Remote control for steady and varying
intensity
Light-reflection switches (max. 500 kHz)
Sensor technology
Typ
Type
F 0118G
Bestellnummer
Ordering Code
Q65110A0136
Beschreibung
Description
Infrarot emittierender Chip, Oberseite Anodenanschluß,
Infrared emitting die, top side anode connection
2003-04-10
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F 0118G
Elektrische Werte (TA = 25 °C)
Electrical values1) (TA = 25 °C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value2)
Einheit
Unit
min. typ.
max.
Emissionswellenlänge
Peak wavelength
IF = 10 mA
Spektrale Bandbreite bei 50% von Imax,
Spectral bandwidth at 50% of Imax
IF = 10 mA
Schaltzeiten, Ie von 10% auf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50
Switching times, Ie from 10% to 90% and from 90%
to 10%, IF = 100 mA, RL = 50
Sperrspannung
Reverse voltage
IR = 1µA
Durchlaβspannung
Forward voltage
IF = 100 mA
Strahlungsleistung
Radiant Power3)
IF = 100 mA
Photostrom (Spezifikationsparameter Helligkeit)
Photocurrent (specified parameter brightness)
IF = 100 mA
λpeak
∆λ
tr, tf
VR
VF
Φe
Ie
950
55
0.5/0.4
5
1.4 1.6
12
0.65
nm
nm
µs
V
V
mW
a.u.
1) Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment
of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips are
picked from each foil and placed on a special carrier for measurement purposes. The sampling density is one chip per
2 cm². If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a sample
fails in that measurement, an area of 0,5 cm² around each failed sample is marked by pen. All el. values are referenced
to the vendor's measurement system (correlation to customer product(s) is required)
2) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3) Radiant power is measured on TO-18 header in integrating sphere.
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F 0118G
Mechanische Werte
Mechanical values
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value1)
Einheit
Unit
min. typ.
max.
Chipkantenlänge (x-Richtung)
Length of chip edge (x-direction)
Lx
0.28 0.30
0.32 mm
Chipkantenlänge (y-Richtung)
Length of chip edge (y-direction)
Ly
0.28 0.30
0.32 mm
Durchmesser des Wafers
Diameter of the wafer
D
76.2
mm
Chiphöhe
Die height
H
165 185
205 µm
Bondpaddurchmesser
Diameter of bondpad
d 135 µm
Weitere Informationen
Additional information2)
Vorderseitenmetallisierung
Metallization frontside
Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside
Goldlegierung
Gold alloy
Trennverfahren
Dicing
Sägen
Sawing
Verbindung Chip - Träger
Die bonding
Kleben
Epoxy bonding
1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
2) All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:
The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The
visual inspection of chip backside is performed by eye for 100% of the area of each wafer. If decisions (good/bad) are
not possible additional a stereo microscope with incident light with 40x-80x magnification is used. Areas greater than
¼ cm² which have an amount of more than 3% failed dies will be marked manually with pen. The marked area from
backside will be transfered to frontside and will be also marked manually with pen. The visual inspection of chip
frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of
each wafer. Areas greater than 1 cm² which have an amount of more than 50% failed dies and areas greater than 2
cm² which have an amount of more than 25% failed dies will be marked. The quality inspection (final visual inspection)
is performed by production. An additional visual inspection step as special release procedure by QM after the final
visual inspection is not installed.
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