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Transistors
2SA2091S
Medium power transistor (60V, 1A)
2SA2091S
!Features
1) High speed switching. (Tf : Typ. : 30ns at IC = 1A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 0.5A, IB = 50mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5879S
!Applications
Small signal low frequency amplifier
High speed switching
!External dimensions (Unit : mm)
SPT
(SC-72)
4.0 2.0
0.45
(1) Emitter
2.5
5.0
0.5 0.45
(2) Collector
(3) Base
(1) (2) (3)
Taping specifications
Abbreviated symbol : A2091S
!Structure
PNP Silicon epitaxial planar transistor
!Packaging specifications
Type
2SA2091S
Package
Code
Basic ordering unit (pieces)
Taping
TP
5000
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
Junction temperature
Range of storage temperature
Pw=100ms
PC
Tj
Tstg
Limits
60
60
6
1.0
2.0
300
150
55 to 150
Unit
V
V
V
A
A
mW
°C
°C
1/3

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Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transition frequency
fT
Corrector output capacitance
Cob
Turn-on time
Storage time
Ton
Tstg
Fall time
Tf
1 Non repetitive pulse
2 See Switching charactaristics measurement circuits
Min.
60
60
6
120
Typ.
200
300
15
30
100
30
Max.
1.0
1.0
500
270
Unit
V
V
V
µA
µA
mV
MHz
pF
ns
ns
ns
Condition
IC= −1mA
IC= −100µA
IE= −100µA
VCB= −40V
VEB= −4V
IC= −500mA
IB= −50mA
VCE= −2V
IC= −100mA
VCE= −10V
IE=100mA
f=10MHz
VCB= −10V
IE=0mA
f=1MHz
IC= −1.0A
IB1= −100mA
IB2=100mA
VCC 25V
2SA2091S
1
2
!hFE RANK
Q
120270
!Electrical characteristic curves
10
1
100ms
10ms
1ms
0.1 DC
0.01
Single
non repetitive
0.001 Pulsed
0.01 0.1
1
10 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
100
Ta=25°C
VCE= −5V
VCE= −3V
VCE= −2V
10
1000
Tstg
100 Tf
Ton
Ta=25°C
VCC= −25V
IC / IB=10 / 1
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
10
IC / IB=10 / 1
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
1000
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE= −2V
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
10
Ta=25°C
1
0.1
IC / IB=100/1
IC / IB=20/1
IC / IB=10/1
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
0.01
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
0.01
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2/3

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Transistors
10
IC / IB=10 / 1
1
Ta=125°C
Ta=25°C
0.1 Ta= −40°C
0.01
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current
10
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
VCE= −2V
0.01
0
0.5 1 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.8 Grounded Emitter
Propagation Characteristics
2SA2091S
1000
Ta=25°C
VCE= −10V
100
10
1
0.001
0.01
0.1
1
EMITTER CURRENT : IE (A)
10
Fig.9 Transition Frequency
100
Ta=25°C
f=1MHz
10
1
0.1
1
10 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
!Switching characteristics measurement circuits
VIN PW
IB1
PW 50µs
DUTY CYCLE 1%
IB2
RL=12.5
IC
VCC 25V
BASE CURRENT
WAVEFORM
90%
Ton
COLLECTOR CURRENT
WAVEFORM
Tstg
10%
IB2
IB1
Tf
IC
3/3

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Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0