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Z00607MA
® Z00607DA
SENSITIVE GATE TRIACS
FEATURES
IT(RMS) = 0.8A
VDRM = 400V and 600V
IGT = 5mA
A2 A1
G
DESCRIPTION
The Z006607xA triacs are intended for general
applications where high gate sensitivity is
required.
A1
G A2
TO92
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
Tstg
Tj
Tl
Parameter
RMS on-state current
(360° conduction angle)
Tl= 50 °C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 8.3 ms
tp = 10 ms
Non repetitive surge peak on-state current
(Tj initial = 110°C, full cycle)
I2t Value for fusing
F = 60Hz
tp = 10 ms
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s
Value
0.8
10.5
10
8
0.5
- 40, + 150
- 40, + 110
260
Unit
A
A
A2s
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 110°C
May 1999 - Ed: 1
Z00607xA
DM
400 600
Unit
V
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Z00607DA / Z00607MA
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-l)
Junction to ambient
Junction to lead
Parameter
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT VD=12V (DC) RL=140Tj= 25°C I-II-III MAX
IV MAX
VGT VD=12V (DC) RL=140Tj= 25°C I-II-III-IV MAX
VGD VD=VDRM RL=3.3k
Tj= 110°C I-II-III-IV MIN
tgt VD=VDRM IG = 25mA
IT = 1.0A
dIG/dt = 0.25A/µs
Tj= 25°C I-II-III-IV TYP
IH * IT= 200 mA Gate open Tj= 25°C
MAX
IL IG= 1.2 IGT
Tj= 25°C I-III-IV MAX
II MAX
VTM *
IDRM
IRRM
ITM= 1.1A tp= 380µs
VD = VDRM
VR = VRRM
Tj= 25°C
Tj= 25°C
Tj= 110°C
MAX
MAX
MAX
dV/dt * VD=67%VDRM
Gate open
Tj= 110°C
MIN
(dV/dt)c * (dI/dt)c = 0.35 A/ms
Tj= 110°C
MIN
* For either polarity of electrode A2 voltage with reference to electrode A1
Value
150
60
Sensitivity
07
5
7
1.5
0.2
2
5
10
20
1.5
10
0.1
10
1.5
Unit
°C/W
°C/W
Unit
mA
V
V
µs
mA
mA
V
µA
mA
V/µs
V/µs
Fig 1: Maximum power dissipation versus RMS
on-state current.
Fig 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tlead).
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2 α=30°
0.1
0.0
0.0 0.1
α=180°
α=90°
α=120°
α=60°
IT(RMS)(A)
0.2 0.3 0.4 0.5
180°
α
α
0.6 0.7 0.8
P(W)
1.0
0.9
0.8
Rth(j-l)
Tlead (°C)
50
0.7
0.6 70
0.5
Rth(j-a)
0.4
0.3 90
0.2
0.1 α=180°
Tamb(°C)
0.0 110
0 10 20 30 40 50 60 70 80 90 100 110
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Z00607DA / Z00607MA
Fig 3: RMS on-state current versus ambient tem- Fig 4: Relative variation of thermal impedance
perature.
junction to ambient versus pulse duration.
IT(RMS)(A)
1.0
0.9
0.8
Rth(j-a)=Rth(j-l)
α=180°
0.7
0.6
0.5
0.4
Rth(j-a)=150°C/W
0.3
0.2
0.1 Tamb(°C)
0.0
0 10 20 30 40 50 60 70 80 90 100 110
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
Fig 6: Non repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj] / IGT,IH[Tj=25°C]
2.5
2.0 IGT
1.5
IH
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120
ITSM(A)
9
8
7
6
5
4
3
2
1
0
1
Tj initial=25°C
F=50Hz
Number of cycles
10 100
1000
Fig 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
ITSM(A),I²t(A²s)
50.0
10.0
ITSM
Tj initial=25°C
1.0
0.1
1
I²t
tp(ms)
25
10
Fig 8: On-state characteristics (maximum values).
ITM(A)
10.0
Tj max.:
Vto= 0.95 V
Rd= 420 m
1.0
Tj=Tj max.
Tj=25°C
VTM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
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