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Z0107NN
4Q Triac
27 August 2013
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-
mountable plastic package intended for applications requiring direct interfacing to logic
level ICs and low power gate drivers.
2. Features and benefits
Direct interfacing to logic level ICs
Direct interfacing to low power gate drive circuits
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate
3. Applications
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tsp ≤ 105 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 9
Min Typ Max Unit
- - 800 V
- - 8A
- - 1A
- - 5 mA
- - 5 mA
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NXP Semiconductors
Z0107NN
4Q Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 9
Min Typ Max Unit
- - 5 mA
- - 7 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
4 T2 main terminal 2
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Z0107NN
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Z0107NN
Product data sheet
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NXP Semiconductors
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tsp ≤ 105 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs;
T2+ G+
IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs;
T2+ G-
IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs;
T2- G-
IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs;
T2- G+
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
Z0107NN
4Q Triac
Min Max Unit
- 800 V
- 1A
- 8A
- 8.5 A
- 0.32 A2s
- 50 A/µs
- 50 A/µs
- 50 A/µs
- 20 A/µs
- 1A
- 2W
- 0.1 W
-40 150 °C
- 125 °C
Z0107NN
Product data sheet
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8
IT(RMS)
(A)
6
4
2
003aac269
1 .2
IT(RMS)
(A)
0 .8
0 .4
Z0107NN
4Q Triac
003a a c270
010-2
10-1
1 10
surge duration (s)
f = 50 Hz; Tsp = 105 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
2 .0
Ptot
(W)
1 .6
1 .2
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
alpha
0 .8
0 .4
0
-50 0 50 100 150
Ts p (°C)
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
003aac259
alpha = 180°
1 2 0°
9 0°
6 0°
3 0°
0 .0
0
0.2 0.4 0.6 0.8
1
Fig. 3.
alpha = conduction angle
a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
1 .2
IT(RMS ) (A)
Z0107NN
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NXP Semiconductors
Z0107NN
4Q Triac
10
ITSM
(A)
8
003aad318
6
4
IT ITSM
2t
1/f
Tj(init) = 25 °C max
0
1
10 102 103
number of cycles
Fig. 4.
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
103
ITS M
(A)
003a a d319
IT ITSM
t
102
(1)
(2)
tp
Tj(init) = 25 °C max
10
110-5
10-4
10-3
10-2
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
10-1
Z0107NN
Product data sheet
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27 August 2013
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