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Z0103/07/09 series

Triacs

Rev. 02 — 12 September 2002

Product data

1. Product proﬁle

1.1 Description

Passivated triacs in conventional and surface mounting packages. Intended for use in

applications requiring high bidirectional transient and blocking voltage capability.

Available in a range of gate current sensitivities for optimum performance.

Product availability:

Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B

Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.

1.2 Features

s Blocking voltage to 800 V (NA and NN s 1 A on-state RMS current.

types)

1.3 Applications

s Home appliances

s Fan controllers

s Small motor control

s Small loads in industrial process

control.

2. Pinning information

Table 1: Pinning - SOT54B (TO-92), SOT223, simpliﬁed outline and symbol

Pin Description

Simpliﬁed outline

1 terminal 2 (T2) SOT54B

2 gate (G)

(TO-92)

3 terminal 1 (T1)

1 terminal 1 (T1) SOT223

2 terminal 2 (T2)

3 gate (G)

4 terminal 2 (T2)

MSB033

Top view

MSB002 - 1

SOT54B (TO-92)

SOT223

Symbol

T1 MBL300

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Philips Semiconductors

Z0103/07/09 series

Triacs

3. Ordering information

3.1 Ordering options

Table 2: Ordering information

Part Number

Z0103MA

Z0103NA

Z0107MA

Z0107NA

Z0109MA

Z0109NA

Z0103MN

Z0103NN

Z0107MN

Z0107NN

Z0109MN

Z0109NN

Voltage (VDRM)

600 V

800 V

600 V

800 V

600 V

800 V

600 V

800 V

600 V

800 V

600 V

800 V

4. Limiting values

Gate Sensitivity (IGT)

3 mA

5 mA

10 mA

3 mA

5 mA

10 mA

Package

SOT54B (TO-92)

SOT223

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDRM

repetitive peak off-state voltage

25 °C ≤ Tj ≤ 125 °C

Z0103/07/09MA; Z0103/07/09MN

Z0103/07/09NA; Z0103/07/09NN

VRRM

repetitive peak reverse voltage

25 °C ≤ Tj ≤ 125 °C

Z0103/07/09MA; Z0103/07/09MN

Z0103/07/09NA; Z0103/07/09NN

ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge;

Figure 2 and Figure 3

t = 20 ms

t = 16.7 ms

IT(RMS)

I2t

RMS on-state current

SOT223

SOT54B (TO-92)

I2t for fusing

all conduction angles; Figure 4

Tsp = 90 °C

Tlead = 50 °C

t = 10 ms

dIT/dt

IGM

PGM

PG(AV)

Tstg

rate of rise of on-state current

peak gate current

peak gate power

average gate power

storage temperature

junction temperature

ITM = 1.0 A; IG = 2 x IGT; dIG/dt = 100 mA/µs

tp = 20 µs

over any 20 ms period

Min Max Unit

- 600 V

- 800 V

- 600 V

- 800 V

-8A

- 8.5 A

-1A

- 0.35 A2s

- 20 A/µs

- 1.0 A

- 2.0 W

- 0.1 W

−40 +150 °C

−40 +125 °C

9397 750 10102

Product data

Rev. 02 — 12 September 2002

2 of 12

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Philips Semiconductors

Z0103/07/09 series

Triacs

1.6

Ptot

(W)

1.2

0.8

0.4

003aaa199

α=

180°

120°

90°

60°

30°

0 0.4 0.8 1.2

IT(RMS) (A)

α = conduction angle

Fig 1. Maximum on-state power dissipation as a

function of RMS on-state current; typical

values.

102

ITSM

(A)

δIT/δt limit

003aaa207

ITSM

(A)

003aaa200

1 10 102 103

n = number of cycles at f = 50 Hz

Fig 2. Maximum permissible non-repetitive peak

on-state current as a function of number of

cycles for sinusoidal currents; typical values.

1.2

IT(RMS)

(A)

0.8

0.4

003aaa201

SOT54B

(Tlead)

SOT223

(Tsp)

10-1

10-5

10-4

10-3

ts (s)

10-2

0 50 100 150

Tlead, Tsp (°C)

Fig 3. Maximum permissible non-repetitive peak

on-state current as a function of surge duration

for sinusoidal currents; typical values.

Fig 4. Maximum permissible RMS on-state current as

a function of lead temperature and solder point

temperature; typical values.

9397 750 10102

Product data

Rev. 02 — 12 September 2002

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Philips Semiconductors

Z0103/07/09 series

Triacs

5. Thermal characteristics

Table 4:

Symbol

Rth(j-sp)

Rth(j-lead)

Rth(j-a)

Thermal characteristics

Parameter

Conditions

thermal resistance from junction to solder

point for SOT223

Figure 5

thermal resistance from junction to lead for Figure 5

SOT54B (TO-92)

thermal resistance from junction to ambient

SOT223

minimum footprint; mounted on a PCB

SOT54B (TO-92)

vertical in free air

Min Typ Max Unit

- - 25 K/W

- - 60 K/W

- 60 -

- 150 -

K/W

5.1 Transient thermal impedance

10-1

10-2

SOT223

SOT54B

003aaa206

10-3

10-4

10-5

10-4

10-3

10-2

10-1

10 102 tp (s) 103

a = -ZR---tt--hh---((--jj---––---ll--ee--aa---dd---)) for SOT54B (TO-92)

a = -ZR---tt--hh---((--jj---––---ss--pp---)) for SOT223

Fig 5. Transient thermal impedance from junction to lead and junction to solder point as a function of pulse

duration.

9397 750 10102

Product data

Rev. 02 — 12 September 2002

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Philips Semiconductors

Z0103/07/09 series

Triacs

6. Characteristics

Table 5: Characteristics

Tj = 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Static characteristics

IGT gate trigger current VD = 12 V; RL = 30 Ω; T2+ G+; T2+ G−; T2− G−;

Z0103MA/MN/NA/NN Figure 9

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2− G+; Figure 9

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

IL latching current

VD = 12 V; RL = 30 Ω; T2+ G+; T2− G−; T2− G+;

Z0103MA/MN/NA/NN Figure 7

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2+ G−; Figure 7

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

IH holding current

IT = 50 mA; Figure 8

Z0103MA/MN/NA/NN

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

VT on-state voltage

VGT gate trigger voltage

ID off-state leakage current

Dynamic characteristics

Figure 6

VD = 12 V; RL = 30 Ω; Tj = 25 °C; Figure 11

VD = VDRM; RL = 3.3 kΩ; Tj = 125 °C; Figure 11

VD = VDRM(max); VR = VRRM(max); Tj = 125 °C

dVD/dt

critical rate of rise of

off-state voltage

VD = 0.67 VDRM(max); Tj = 110 °C; exponential

waveform; gate open; Figure 10

Z0103MA/MN/NA/NN

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

dVcom/dt

critical rate of change of

commutating voltage

Z0103MA/MN/NA/NN

VD = 400 V; IT = 1 A; Tj = 110 °C;

dIcom/dt = 0.44 A/ms; gate open

Z0107MA/MN/NA/NN

Z0109MA/MN/NA/NN

Min Typ Max Unit

- - 3 mA

- - 5 mA

- - 10 mA

- - 5 mA

- - 7 mA

- - 10 mA

- - 7 mA

- - 10 mA

- - 15 mA

- - 20 mA

- - 25 mA

- - 7 mA

- - 10 mA

- 1.3 1.6 V

- - 1.3 V

0.2 - - V

- - 500 µA

10 - - V/µs

20 - - V/µs

50 - - V/µs

0.5 - - V/µs

1 - - V/µs

2 - - V/µs

9397 750 10102

Product data

Rev. 02 — 12 September 2002

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