Z04.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 Z04 데이타시트 다운로드

No Preview Available !

Standard
Z04
4 A Triacs
Main features
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
4
600 to 800
3 to 25
Unit
A
V
mA
A2
G
A1
Description
The Z04 series is suitable for general purpose AC
switching applications. They can be found in
applications such as home appliances
(electrovalve, pump, door lock, small lamp
control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
A1
A2
G
TO202-3
Order codes
Part Number
Z04xxyF(1)
1. xx = sensitivity, y = voltage
Marking
Z04xxyF(1)
Table 1. Absolute maximum ratings
Symbol
Parameter
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current F = 50 Hz
(full cycle, Tj initial = 25° C)
F = 60 Hz
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current IG =
2 x IGT , tr 100 ns
F = 120 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tamb = 25° C
Tl = 30° C
t = 20 ms
t = 16.7 ms
Tj = 125° C
Tj = 125° C
Tj = 125° C
Value
Unit
4A
20
21
2.2
20
1.2
0.2
- 40 to + 150
- 40 to + 125
A
A²s
A/µs
A
W
°C
May 2006
Rev 7
1/8
www.st.com
8

No Preview Available !

Characteristics
1 Characteristics
Z04
Table 2. Electrical Characteristics (Tj = 25° C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Z04
Unit
02 05 09 10
IGT (1)
VGT
VD = 12 V RL = 30
I - II - III - IV
MAX
.
ALL
MAX
.
VGD
IH (2)
VD = VDRM RL = 3.3 k
Tj = 125° C
IT = 50 mA
ALL
MIN.
MAX
.
IL IG = 1.2 IGT
I - III - IV
II
dV/dt (2) VD = 6 % VDRM gate open Tj = 110° C
(dV/dt)c (2) (dI/dt)c = 1.8 A/ms Tj = 110° C
MAX
.
MIN.
MIN.
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
3
3
6
12
10
0.5
5 10 25 mA
1.3 V
0.2 V
5 10 25 mA
10 15 25
mA
15 25 50
20 100 200 V/µs
1 2 5 V/µs
Table 3. Static Characteristics
Symbol
Test Conditions
VTM (1)
Vto (1)
Rd (1)
IDRM
IRRM
ITM = 5.5 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 25° C
Tj = 125° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
1. for both polarities of A2 referenced to A1.
MAX.
MAX.
MAX.
MAX.
Value
2.0
0.95
180
5
0.5
Unit
V
V
m
µA
mA
Table 4. Thermal resistances
Symbol
Parameter
Value Unit
Rth(j-I)
Rth(j-a)
Junction to lead (AC)
Junction to ambient
15 ° C/W
100 ° C/W
2/8

No Preview Available !

Z04 Characteristics
Figure 1.
Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2. RMS on-state current versus
ambient temperature (full cycle)
P(W)
7
6
5
4
IT(RMS)(A)
4.5
4.0
3.5
3.0
2.5
Rth(j-a) = Rth(j-l)
3 2.0
1.5 Rth(j-a) = 100°C/W
2
1.0
1
IT(RMS)(A)
0
0.5
Tamb (°C)
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0 25 50 75 100 125
Figure 3.
Relative variation of thermal
impedance versus pulse
duration
Figure 4.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
K=[Zth(j-a)/Rth(j-a)]
1E+0
1E-1
1E-2
1E-3
1E-3
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
1.5
IH & IL
1.0
IGT
0.5
Tj (°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Figure 5. Surge peak on-state current
versus number of cycles
Figure 6.
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms and corresponding
value of I2t
ITSM (A)
25
20
15
10
5
0
1
Repetitive
Tamb = 25°C
Non repetitive
Tj initial = 25°C
Number of cycles
10 100
t=20ms
One cycle
1000
ITSM (A), I2t (A2s)
500
100
dI/dt limitation:
20A/µs
10
1
0.01
tp (ms)
0.10 1.00
Tj initial = 25°C
ITSM
I2t
10.00
3/8