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CORPORATION
N-Channel Enhancement Mode
MOSFET General Purpose
Amplifier/Switch
2N4351
FEATURES
Low ON Resistance
Low Capacitance
High Gain
High Gate Breakdown Voltage
•• Low Threshold Voltage
PIN CONFIGURATION
TO-72
1003
D
G
C
S
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
Drain-Source Voltage or Drain-Body Voltage . . . . . . . . . . 25V
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
2N4351 Hermetic TO-72
X2N4351 Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
MIN MAX
BVDSS
IGSS
IDSS
VGS(th)
ID(on)
VDS(on)
rDS(on)
| yfs |
Crss
Ciss
Cd(sub)
td(on)
tr
td(off)
tf
Drain-Source Breakdown Voltage
Gate Leakage Current
Zero-Gate-Voltage Drain Current
Gate-Source Threshold Voltage
"ON" Drain Current
Drain-Source "ON" Voltage
Drain-Source Resistance
Forward Transfer Admittance
Reverse Transfer Capacitance (Note 2)
Input Capacitance (Note 2)
Drain-Substrate Capacitance (Note 2)
Turn-On Delay (Note 2)
Rise Time (Note 2)
Turn-Off Delay (Note 2)
Fall Time (Note 2)
25
1
3
1000
10
10
5
1
300
1.3
5.0
5.0
45
65
60
100
NOTES: 1. Device must not be tested at ±125V more than once or longer than 300ms.
2. For design reference only, not 100% tested.
UNITS
V
pA
nA
V
mA
V
ohms
µS
pF
ns
TEST CONDITIONS
ID = 10µA, VGS = 0
VGS = ±30V, VDS = 0
VDS = 10V, VGS = 0
VDS = 10V, ID = 10µA
VGS = 10V, VDS = 10V
ID = 2mA, VGS = 10V
VGS = 10V, ID = 0, f = 1kHz
VDS = 10V, ID = 2mA, f = 1kHz
VDS = 0, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
VD(SUB) = 10V, f = 1MHz