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CORPORATION
P-Channel Enhancement Mode
MOSFET Amplifier/Switch
2N4352
FEATURES
Low ON Resistance
Low Capacitance
High Gain
P-Channel Complement to 2N4341
PIN CONFIGURATION
TO-72
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
1503
D
G
C
S
Part
2N4352
X2N4352
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
V(BR)DSX
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
Gate Reverse Current
Gate Threshold Voltage
-25 Vdc ID = -10µA, VGS = 0
-10
nAdc
VDS = -10V, VGS = 0, TA = 25oC
-10
µAdc
VDS = -10V, VGS = 0, TA = 150oC
±10 pA VGS = ±30V, VDS = 0
-1.0 -5.0 Vdc VDS = -10V, ID = -10µA
VDS(on)
Drain-Source On-Voltage
-1.0 V ID = -2mA, VGS = -10V
ID(on)
On-State Drain Current
-3.0 mA VGS = -10V, VDS = -10V
rDS(on)
| yfs |
Ciss
Crss
Cd(sub)
Drain-Source Resistance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Drain-Substrate Capacitance
1000
600 ohms VGS = -10V, ID = 0, f = 1.0kHz
µmho VDS = -10V, ID = 2.0mA, f = 1.0kHz
5.0 VDS = -10V, VGS = 0, f = 140MHz
1.3 pF VDS = 0, VGS = 0, f = 140MHz
5.0 VD(sub) = -10V, f = 140kHz
td1 Turn-On Delay
45
tr Rise Time
td2 Turn-Off Delay
65
60
ns
ID = -2.0mAdc, VDS = -10Vdc
VGS = -10V
tf Fall Time
100
CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025