X2N4416.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 X2N4416 데이타시트 다운로드

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N-Channel JFET
High Frequency Amplifier
CORPORATION
2N4416 / 2N4416A / PN4416
FEATURES
Low Noise
Low Feedback Capacitance
Low Output Capacitance
High Transconductance
•• High Power Gain
PIN CONFIGURATION
TO-72
TO-92
CJ1
G
D
C
S
SD G
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
Gate-Source or Gate-Drain Voltage
2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC +150oC
Operating Temperature Range
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
2N4416
2N4416A
PN4416
X2N4416
Package
Hermetic TO-72
Hermetic TO-72
Plastic TO-92
Sorted Chips in Carriers
Temperature Range
-55oC to +135oC
-55oC to +135oC
-55oC to +135oC
-55oC to +135oC

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CORPORATION
2N4416 / 2N4416A / PN4416
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
MIN
IGSS Gate Reverse Current
BVGSS
VGS(off)
VGS(f)
IDSS
gfs
gos
Crss
Ciss
Coss
Gate-Source Breakdown Voltage
2N4416/PN4416
2N4416A
Gate-Source Cutoff Voltage
2N4416/PN4416
2N4416A
Gate-Source Forward Voltage
Drain Current at Zero Gate Voltage
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Reverse Transfer Capacitance (Note 1)
Common-Source Input Capacitance (Note 1)
Common-Source Input Capacitance (Note 1)
-30
-35
-2.5
5
4500
MAX
-0.1
-0.1
-6
-6
1
15
7500
50
0.8
4
2
UNITS
nA
µA
TEST CONDITIONS
VGS = -20V, VDS = 0
TA = 150oC
IG = -1µA, VDS = 0
V
VDS = 15V, ID = 1nA
V IG = 1mA, VDS = 0
mA
µS f = 1kHz
µs VDS = 15V,
VGS = 0
pF
f = 1MHz
pF
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
100MHz
MIN MAX
400MHz
MIN MAX
UNITS
TEST CONDITIONS
giss Common-Source Input Conductance
100
1000
biss Common-Source Input Susceptance
2500
10,000
goss
Common-Source Output
Conductance
75 100 µS VDS = 15V, VGS = 0 (Note 1)
boss Common-Source Output Susceptance
1000
4000
gfs
Common-Source Forward
Transconductance
4000
Gps Common-Source Power Gain
NF Noise Figure (Note 1)
18 10
VDS = 15V, ID = 5mA (Note 1)
dB
2 4 VDS = 15V, ID = 5mA, RG = 1k
NOTE 1: For design reference only, not 100% tested.