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P-Channel JFET Switch
CORPORATION
2N5114 – 2N5116
GENERAL DESCRIPTION
Ideal for inverting switching or "Virtual Gnd" switching into
inverting input of Op. Amp. No driver is required and ±10VAC
signals can be handled using only +5V logic (TTL or CMOS).
FEATURES
Low ON Resistance
ID(off)<500pA
•• Switches directly from TTL Logic
PIN CONFIGURATION
TO-18
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +200oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
Temperature Range
2N5114-16 Hermetic TO-18
-55oC to +200oC
X2N5114-16 Sorted Chips in Carriers -55oC to +200oC
5508
D
G,C
S
SWITCHING CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
td Turn-ON Delay Time
2N5114
MAX
6
2N5115
MAX
10
tr Rise Time (Note 2)
10 20
toff Turn-OFF Delay Time (Note 2)
6
8
tf Fall Time (Note 2)
15 30
2N5116
MAX
12
30
10
50
UNITS
ns
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
BVGSS
Gate-Source Breakdown Voltage
2N5114
MIN MAX
30
2N5115
MIN MAX
30
IGSS Gate Reverse Current
500 500
1.0 1.0
-500
-500
ID(off)
Drain Cutoff Current
-1.0 -1.0
VP
Gate-Source Pinch-Off Voltage
5
10
3
6
2N5116
MIN MAX
30
500
1.0
-500
-1.0
14
UNITS TEST CONDITIONS
V IG = 1µA, VDS = 0
pA VGS = 20V, VDS = 0
µA TA 150oC
pA VDS = -15V
VGS = 12V (2N5114)
µA VGS = 7V (2N5115)
VGS = 5V (2N5116)
V VDS = -15V, ID = -1nA

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CORPORATION
2N5114 – 2N5116
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) (Continued)
SYMBOL
PARAMETER
2N5114
MIN MAX
2N5115
MIN MAX
2N5116
MIN MAX
IDSS
Drain Current at Zero Gate Voltage
(Note 1)
-30
-90
-15
-60
-5
-25
VGS(f)
Forward Gate-Source Voltage
-1 -1
-1
VDS(on) Drain-Source ON Voltage
-1.3 -0.8
-0.6
rDS(on) Static Drain-Source ON Resistance
75
100
150
rds(on)
Small-Signal Drain-Source ON
Resistance
75 100 150
Ciss
Common-Source Input Capacitance
(Note 2)
25
25
25
Crss
Common-Source Reverse Transfer
Capacitance (Note 2)
7
7
7
NOTES 1. Pulse test; duration = 2ms.
2. For design reference only, not 100% tested.
UNITS TEST CONDITIONS
VGS = -0
mA
VDS = -18V (2N5114)
VDS = -15V (2N5115)
VDS = -15V (2N5116)
IG = -1mA, VDS = 0
VGS = 0
V ID = -15mA (2N5114)
ID = -7mA (2N5115)
ID = -3mA (2N5116)
VGS = 0, ID = -1mA
VGS = 0, ID = 0, f = 1kHz
VDS = -15V, VGS = 0,
f = 1mHz
VDS = 0
pF VGS = 12V (2N5114)
VGS = 7V (2N5115)
VGS = 5V (2N5116)
f = 1mHz
TEST CONDITIONS
2N5114 2N5115 2N5116
VDD -10V -6V
-6V
VGG 20V 12V
8V
RL 4309102K
RG 100220390
ID(ON) -15mA -7mA -3mA
VIN
-12V
-7V
-5V
INPUT
10%
VIN
VDS(ON)
td
90%
10%
-6V
tr
OUTPUT
90%
tOFF
tr
10%
0040
VIN
TYPICAL PERFORMANCE CHARACTERISTICS
Vp vs rDS(ON)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0 3.0
VDS = 0.1V
2.0
VGS = 0
2.0
Vp vs IDSS
VDS = 20V
VGS = 0
(pulsed)
0.1µF
VGG
1.2K
RG
VDD
RL
511.2K
7.5K
SAMPLING
51SCOPE
51
SAMPLING SCOPE
RISE TIME 0.4ns
INPUT RESISTANCE 10M
INPUT CAPACITANCE 1.5pF
0050
Vp vs gfs
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
VDS = 20V
2.0 VGS = 0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
10
30 100 300
rDS(ON)(ohms)
1,000
0060
1.0
0.9
0.8
0.7
0.6
0.5
1
3 10 30
t DSS (mA)
100
0070
1.0
0.9
0.8
0.7
0.6
0.5
1,000
3,000
10,000
gfs (µV)
30,000
100,000
0080