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N-Channel JFET Switch
2N5434
FEATURES
Low rds(on)
Excellent Switching
•• Low Cutoff Current
PIN CONFIGURATION
(TO-52)
5018
G, C
D
S
CORPORATION
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
2N5434
X2N5434
Package
Temperature Range
Hermetic TO-52
-55oC to +150oC
Sorted Chips in Carriers -55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
IGSS
BVGSS
ID(off)
VGS(off)
IDSS
rDS(on)
VDS(on)
rds(on)
Ciss
Crss
td
tr
toff
tf
Gate Reverse Current
Gate-Source Breakdown Voltage
Drain Cutoff Current
Gate-Source Cutoff Voltage
Saturation Drain Current (Note 1)
Static Drain-Source ON Resistance
Drain-Source ON Voltage
Drain-Source ON Resistance
Common-Source Input Capacitance (Note2)
Common-Source Reverse Transfer Capacitance (Note 2)
Turn-ON Delay Time (Note 2)
Rise Time (Note 2)
Turn-OFF Delay Time (Note 2)
Fall Time (Note 2)
2N5434
MIN MAX
-200
-200
-25
200
200
-1 -4
30
10
100
10
30
15
4
1
6
30
NOTES: 1. Pulse test required, pulsewidth 300µs, duty cycle 3%.
2. For design reference only, not 100% tested.
UNITS
TEST CONDITIONS
pA
nA
V
pA
nA
V
mA
ohm
mV
ohm
pF
VGS = -15V, VDS = 0
TA = 150oC
IG = -1µA, VDS = 0
VDS = 5V, VGS = -10V
TA = 150oC
VDS = 5V, ID = 3nA
VDS = 15V, VGS = 0
VGS = 0, ID = 10mA
VGS = 0, ID = 0 f = 1kHz
VDS = 0,
VGS = -10 V
f = 1MHz
VDD = 1.5V,
ns VGS(on) = 0,
VGS(off) = -12V,
ID(on) = 10mA

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CORPORATION
SWITCHING TIME, TEST CIRCUIT
VIN
RG
50
VDD
RL =
VDD - VDS(ON)
ID(ON)
D VOUT
S
2N5434
INPUT PULSE
RISE TIME 0.25ns
FALL TIME 0.75ns
PULSE WIDTH 200ns
PULSE RATE 550pps
SAMPLING SCOPE
RISE TIME 0.4ns
INPUT RESISTANCE 10M
INPUT CAPACITANCE 1.5pF
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