X2N5912.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 X2N5912 데이타시트 다운로드

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CORPORATION
Dual N-Channel JFET
High Frequency Amplifier
2N5911 / 2N5912
FEATURES
Tight Tracking
Low Insertion Loss
•• Good Matching
PIN CONFIGURATION
TO-99
CJ1
C
S2 D2
G1
G2
D1 S1
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation
Derate above 25oC
One Side
367mW
3.0mW/ oC
Both Sides
500mW
4.0mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
2N5911-12
X2N5912
Package
Temperature Range
Hermetic TO-99
-55oC to +150oC
Sorted Chips in Carriers -55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
IGSS
BVGSS
VGS(off)
VGS
IG
IDSS
gfs
gfs
gos
goss
Ciss
Crss
Gate Reverse Current
Gate Reverse Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Source Voltage
Gate Operating Current
Saturation Drain Current (Pulsewidth 300µs, duty cycle 3%)
Common-Source Forward Transconductance
Common-Source Forward Transconductance (Note 1)
Common-Source Output Conductance
Common-Source Output Conductance (Note 1)
Common-Source Input Capacitance (Note 1)
Common-Source Reverse Transfer Capacitance (Note 1)
-100
-250
pA VGS = -15V, VDS = 0
nA TA = 150oC
-25 IG = -1µA, VDS = 0
-1 -5 V VDS = 10V, ID = 1nA
-0.3 -4
VDG = 10V, ID = 5mA
-100 pA
-100 nA
TA = 150oC
7 40 mA VDS = 10V, VGS = 0V
5000 10,000
f = 1kHz
5000
10,000
100
µS
f = 100MHz
f = 1kHz
150 f = 100MHz
5 VDG = 10V, ID = 5mA
pF f = 1MHz
1.2
en Equivalent Short Circuit Input Noise Voltage (Note 1)
20
nV
√Hz
f = 10kHz
NF Spot Noise Figure (Note 1)
1 dB
f = 10kHz
RG = 100k

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2N5911 / 2N5912
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
SYMBOL
| IG1 -IG2 |
IDSS1
IDSS2
PARAMETER
Differential Gate Current
Saturation Drain Current Ratio
2N5911 2N5912
UNITS
MIN MAX MIN MAX
20 20 nA
TEST CONDITIONS
VDG = 10V, ID = 5mA
TA = 125oC
0.95 1 0.95 1
VDS = 10V, VGS = 0
(Pulsewidth 300µA, duty cycle 3%)
| VGS1 -VGS2 |
Differential Gate-Source Voltage
10
15 mV
| VGS1 VGS2 |
T
Gate-Source Voltage
Differential Drift (Measured at
end points, TA and TB)
20 40
µV/ oC VDG = 10V, ID = 5mA
20 40
gfs1
gfs2
Transconductance Ratio
0.95 1 0.95 1
TA = 25oC
TB = 125oC
TA = -55oC
TB = 25oC
f = 1kHz
NOTE 1: For design reference only, not 100% tested.