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CORPORATION
N-Channel Enhancement-Mode
MOS Transistor
2N7000 / BS170L
DESCRIPTION
The 2N7000 utilizes Calogic’s vertical DMOS technology. The
device is well suited for switching applications where BV of
60V and low on resistance (under 5 ohms) are required. The
2N7000 is housed in a plastic TO-92 package.
ORDERING INFORMATION
Part Package
2N7000 Plastic TO-92
BS170L Plastic TO-92
X2N7000 Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
-55oC to +150oC
PIN CONFIGURATION
TO-92
(TO-226AA)
1 SOURCE
2 GATE
3 DRAIN
2N7000
3
2
1
BOTTOM VIEW
2
3
1
CD5
123
1 DRAIN
2 GATE
3 SOURCE
BS170L
3
2
1
BOTTOM VIEW
2
1
3
PRODUCT SUMMARY
P/N
2N7000
BS170
V(BR)DSS
(V)
60
60
rDS(ON)
()
5
5
ID
(A)
0.2
0.5

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2N7000 / BS170L
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ
Tstg
TL
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation1
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
LIMITS
60
±40
0.2
0.13
0.5
0.4
0.16
-55 to 150
-55 to 150
300
UNITS
V
A
W
oC
TEST CONDITIONS
TA = 25oC
TA = 100oC
TA = 25oC
TA = 100oC
THERMAL RESISTANCE RATINGS
SYMBOL
RthJA
THERMAL RESISTANCE
Junction-to-Ambient
NOTE: 1. Pulse width limited by maximum junction temperature.
LIMITS
312.5
UNITS
K/W
SPECIFICATIONS1
SYMBOL
STATIC
V(BR)DSS
VGS(th)
IGSS
PARAMETER
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
IDSS
ID(ON)
Zero Gate Voltage Drain Current
On-State Drain Current3
rDS(ON)
Drain-Source On-Resistance3
MIN
60
0.8
75
VDS(ON)
Drain-Source On-Voltage3
gFS Forward Transconductance3
gOS Common Source Output Conductance3, 4
DYNAMIC
Ciss
Coss
Input Capacitance
Output Capacitance4
Crss Reverse Transfer Capacitance
SWITCHING
tON Turn-On Time
100
tOFF
Turn-Off Time
NOTES: 1. TA = 25oC unless otherwise specified.
2. For design aid only, not subject to production testing.
3. Pulse test; PW = 300µS, duty cycle 3%.
4. This parameter not registered with JEDEC.
TYP2
70
1.9
210
4.8
2.5
4.4
0.36
1.25
2.2
170
500
16
11
2
7
7
MAX
3
±10
1
1000
5.3
5
9
0.4
2.5
4.5
60
25
5
UNIT
TEST CONDITIONS
ID = 10µA, VGS = 0V
V
VDS = VGS, ID = 1mA
nA VGS = ±15V, VDS = 0V
VDS = 48V, VGS = 0V
µA TC = 125oC
mA VDS = 10V, VGS = 4.5V
4VGS = 4.5V, ID = 75mA
VGS = 10V, ID = 0.5A
TC = 125oC
4VGS = 4.5V, ID = 75mA
V VGS = 10V, ID = 0.5A
TC = 125oC4
mS VDS = 10V, ID = 0.2A
µS VDS = 5V, ID = 50mA
pF VDS = 25V, VGS = 0V, f = 1MHz
10 VDD = 15V, RL = 25, ID = 0.5A
nS
VGEN = 10V, RG = 25
(Switching time is essentially
10 independent of operating temperature)